Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures

ABSTRACT

A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn&#39;t readily accept deposits of electroplated or electroless deposited materials.

RELATED APPLICATIONS:

This application claims benefit of the following U.S. Provisional PatentApplications 60/468,979, filed May 7, 2003; 60/469,053, filed May 7,2003; 60/533,891, filed Dec. 31, 2003; 60/468,977, filed May 7, 2003;and 60/534,204, filed Dec. 31, 2004. Each of these applications ishereby incorporated herein by references as if set forth in full herein.

FIELD OF THE INVENTION

Embodiments of various aspects of the invention relate to fabricationmethods for forming three-dimensional structures (e.g. meso-scale ormicro-scale structures) from layers that include at least two depositedmaterials wherein the methods include treating or deactivating a surfaceof a first deposited material such that deposition of a second materialonto the surface of the first material is reduced or eliminated andwherein the surface may be activated, modified, or further treated tomake it susceptible to receiving a subsequent deposition.

BACKGROUND

A technique for forming three-dimensional structures (e.g. parts,components, devices, and the like) from a plurality of adhered layerswas invented by Adam L. Cohen and is known as ElectrochemicalFabrication. It is being commercially pursued by Microfabrica™ Inc.(formerly MEMGen® Corporation) of Burbank, Calif. under the name EFAB®.This technique was described in U.S. Pat. No. 6,027,630, issued on Feb.22, 2000. This electrochemical deposition technique allows the selectivedeposition of a material using a unique masking technique that involvesthe use of a mask that includes patterned conformable material on asupport structure that is independent of the substrate onto whichplating will occur. When desiring to perform an electrodeposition usingthe mask, the conformable portion of the mask is brought into contactwith a substrate while in the presence of a plating solution such thatthe contact of the conformable portion of the mask to the substrateinhibits deposition at selected locations. For convenience, these masksmight be generically called conformable contact masks; the maskingtechnique may be generically called a conformable contact mask platingprocess. More specifically, in the terminology of Microfabrica™ Inc.(formerly MEMGen® Corporation) of Burbank, Calif. such masks have cometo be known as INSTANT MASKS™ and the process known as INSTANT MASKINGor INSTANT MASK™ plating. Selective depositions using conformablecontact mask plating may be used to form single layers of material ormay be used to form multi-layer structures. The teachings of the '630patent are hereby incorporated herein by reference as if set forth infull herein. Since the filing of the patent application that led to theabove noted patent, various papers about conformable contact maskplating (i.e. INSTANT MASKING) and electrochemical fabrication have beenpublished:

-   -   (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P.        Will, “EFAB: Batch production of functional, fully-dense metal        parts with micro-scale features”, Proc. 9th Solid Freeform        Fabrication, The University of Texas at Austin, p161, August        1998.    -   (2) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P.        Will, “EFAB: Rapid, Low-Cost Desktop Micromachining of High        Aspect Ratio True 3-D MEMS”, Proc. 12th IEEE Micro Electro        Mechanical Systems Workshop, IEEE, p244, January 1999.    -   (3) A. Cohen, “3-D Micromachining by Electrochemical        Fabrication”, Micromachine Devices, March 1999.    -   (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P.        Will, “EFAB: Rapid Desktop Manufacturing of True 3-D        Microstructures”, Proc. 2nd International Conference on        Integrated MicroNanotechnology for Space Applications, The        Aerospace Co., April 1999.    -   (5) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P.        Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal        Microstructures using a Low-Cost Automated Batch Process”, 3rd        International Workshop on High Aspect Ratio MicroStructure        Technology (HARMST'99), June 1999.    -   (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and P.        Will, “EFAB: Low-Cost, Automated Electrochemical Batch        Fabrication of Arbitrary 3-D Microstructures”, Micromachining        and Microfabrication Process Technology, SPIE 1999 Symposium on        Micromachining and Microfabrication, September 1999.    -   (7) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P.        Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal        Microstructures using a Low-Cost Automated Batch Process”, MEMS        Symposium, ASME 1999 International Mechanical Engineering        Congress and Exposition, November, 1999.    -   (8) A. Cohen, “Electrochemical Fabrication (EFABTM)”, Chapter 19        of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press,        2002.    -   (9) “Microfabrication—Rapid Prototyping's Killer Application”,        pages 1-5 of the Rapid Prototyping Report, CAD/CAM Publishing,        Inc., June 1999.

The disclosures of these nine publications are hereby incorporatedherein by reference as if set forth in full herein.

The electrochemical deposition process may be carried out in a number ofdifferent ways as set forth in the above patent and publications. In oneform, this process involves the execution of three separate operationsduring the formation of each layer of the structure that is to beformed:

-   -   1. Selectively depositing at least one material by        electrodeposition upon one or more desired regions of a        substrate.    -   2. Then, blanket depositing at least one additional material by        electrodeposition so that the additional deposit covers both the        regions that were previously selectively deposited onto, and the        regions of the substrate that did not receive any previously        applied selective depositions.    -   3. Finally, planarizing the materials deposited during the first        and second operations to produce a smoothed surface of a first        layer of desired thickness having at least one region containing        the at least one material and at least one region containing at        least the one additional material.

After formation of the first layer, one or more additional layers may beformed adjacent to the immediately preceding layer and adhered to thesmoothed surface of that preceding layer. These additional layers areformed by repeating the first through third operations one or more timeswherein the formation of each subsequent layer treats the previouslyformed layers and the initial substrate as a new and thickeningsubstrate.

Once the formation of all layers has been completed, at least a portionof at least one of the materials deposited is generally removed by anetching process to expose or release the three-dimensional structurethat was intended to be formed.

The preferred method of performing the selective electrodepositioninvolved in the first operation is by conformable contact mask plating.In this type of plating, one or more conformable contact (CC) masks arefirst formed. The CC masks include a support structure onto which apatterned conformable dielectric material is adhered or formed. Theconformable material for each mask is shaped in accordance with aparticular cross-section of material to be plated. At least one CC maskis needed for each unique cross-sectional pattern that is to be plated.

The support for a CC mask is typically a plate-like structure formed ofa metal that is to be selectively electroplated and from which materialto be plated will be dissolved. In this typical approach, the supportwill act as an anode in an electroplating process. In an alternativeapproach, the support may instead be a porous or otherwise perforatedmaterial through which deposition material will pass during anelectroplating operation on its way from a distal anode to a depositionsurface. In either approach, it is possible for CC masks to share acommon support, i.e. the patterns of conformable dielectric material forplating multiple layers of material may be located in different areas ofa single support structure. When a single support structure containsmultiple plating patterns, the entire structure is referred to as the CCmask while the individual plating masks may be referred to as“submasks”. In the present application such a distinction will be madeonly when relevant to a specific point being made.

In preparation for performing the selective deposition of the firstoperation, the conformable portion of the CC mask is placed inregistration with and pressed against a selected portion of thesubstrate (or onto a previously formed layer or onto a previouslydeposited portion of a layer) on which deposition is to occur. Thepressing together of the CC mask and substrate occur in such a way thatall openings, in the conformable portions of the CC mask contain platingsolution. The conformable material of the CC mask that contacts thesubstrate acts as a barrier to electrodeposition while the openings inthe CC mask that are filled with electroplating solution act as pathwaysfor transferring material from an anode (e.g. the CC mask support) tothe non-contacted portions of the substrate (which act as a cathodeduring the plating operation) when an appropriate potential and/orcurrent are supplied.

An example of a CC mask and CC mask plating are shown in FIGS. 1(a)-1(c). FIG. 1(a) shows a side view of a CC mask 8 consisting of aconformable or deformable (e.g. elastomeric) insulator 10 patterned onan anode 12. The anode has two functions. FIG. 1(a) also depicts asubstrate 6 separated from mask 8. One is as a supporting material forthe patterned insulator 10 to maintain its integrity and alignment sincethe pattern may be topologically complex (e.g., involving isolated“islands” of insulator material). The other function is as an anode forthe electroplating operation. CC mask plating selectively depositsmaterial 22 onto a substrate 6 by simply pressing the insulator againstthe substrate then electrodepositing material through apertures 26 a and26 b in the insulator as shown in FIG. 1(b). After deposition, the CCmask is separated, preferably non-destructively, from the substrate 6 asshown in FIG. 1(c). The CC mask plating process is distinct from a“through-mask”plating process in that in a through-mask plating processthe separation of the masking material from the substrate would occurdestructively. As with through-mask plating, CC mask plating depositsmaterial selectively and simultaneously over the entire layer. Theplated region may consist of one or more isolated plating regions wherethese isolated plating regions may belong to a single structure that isbeing formed or may belong to multiple structures that are being formedsimultaneously. In CC mask plating as individual masks are notintentionally destroyed in the removal process, they may be usable inmultiple plating operations.

Another example of a CC mask and CC mask plating is shown in FIGS.1(d)-1(f). FIG. 1(d) shows an anode 12′ separated from a mask 8′ thatincludes a patterned conformable material 10′ and a support structure20. FIG. 1(d) also depicts substrate 6 separated from the mask 8′. FIG.1(e) illustrates the mask 8′ being brought into contact with thesubstrate 6. FIG. 1(f) illustrates the deposit 22′ that results fromconducting a current from the anode 12′ to the substrate 6. FIG. 1(g)illustrates the deposit 22′ on substrate 6 after separation from mask8′. In this example, an appropriate electrolyte is located between thesubstrate 6 and the anode 12′ and a current of ions coming from one orboth of the solution and the anode are conducted through the opening inthe mask to the substrate where material is deposited. This type of maskmay be referred to as an anodeless INSTANT MASK™ (AIM) or as ananodeless conformable contact (ACC) mask.

Unlike through-mask plating, CC mask plating allows CC masks to beformed completely separate from the fabrication of the substrate onwhich plating is to occur (e.g. separate from a three-dimensional (3D)structure that is being formed). CC masks may be formed in a variety ofways, for example, a photolithographic process may be used. All maskscan be generated simultaneously, prior to structure fabrication ratherthan during it. This separation makes possible a simple, low-cost,automated, self-contained, and internally-clean “desktop factory” thatcan be installed almost anywhere to fabricate 3D structures, leaving anyrequired clean room processes, such as photolithography to be performedby service bureaus or the like.

An example of the electrochemical fabrication process discussed above isillustrated in FIGS. 2(a)-2(f). These figures show that the processinvolves deposition of a first material 2 which is a sacrificialmaterial and a second material 4 which is a structural material. The CCmask 8, in this example, includes a patterned conformable material (e.g.an elastomeric dielectric material) 10 and a support 12 which is madefrom deposition material 2. The conformal portion of the CC mask ispressed against substrate 6 with a plating solution 14 located withinthe openings 16 in the conformable material 10. An electric current,from power supply 18, is then passed through the plating solution 14 via(a) support 12 which doubles as an anode and (b) substrate 6 whichdoubles as a cathode. FIG. 2(a), illustrates that the passing of currentcauses material 2 within the plating solution and material 2 from theanode 12 to be selectively transferred to and plated on the cathode 6.After electroplating the first deposition material 2 onto the substrate6 using CC mask 8, the CC mask 8 is removed as shown in FIG. 2(b). FIG.2(c) depicts the second deposition material 4 as having beenblanket-deposited (i.e. non-selectively deposited) over the previouslydeposited first deposition material 2 as well as over the other portionsof the substrate 6. The blanket deposition occurs by electroplating froman anode (not shown), composed of the second material, through anappropriate plating solution (not shown), and to the cathode/substrate6. The entire two-material layer is then planarized to achieve precisethickness and flatness as shown in FIG. 2(d). After repetition of thisprocess for all layers, the multi-layer structure 20 formed of thesecond material 4 (i.e. structural material) is embedded in firstmaterial 2 (i.e. sacrificial material) as shown in FIG. 2(e). Theembedded structure is etched to yield the desired device, i.e. structure20, as shown in FIG. 2(f).

Various components of an exemplary manual electrochemical fabricationsystem 32 are shown in FIGS. 3(a)-3(c). The system 32 consists ofseveral subsystems 34, 36, 38, and 40. The substrate holding subsystem34 is depicted in the upper portions of each of FIGS. 3(a) to 3(c) andincludes several components: (1) a carrier 48, (2) a metal substrate 6onto which the layers are deposited, and (3) a linear slide 42 capableof moving the substrate 6 up and down relative to the carrier 48 inresponse to drive force from actuator 44. Subsystem 34 also includes anindicator 46 for measuring differences in vertical position of thesubstrate which may be used in setting or determining layer thicknessesand/or deposition thicknesses. The subsystem 34 further includes feet 68for carrier 48 which can be precisely mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower portion of FIG. 3(a)includes several components: (1) a CC mask 8 that is actually made up ofa number of CC masks (i.e. submasks) that share a common support/anode12, (2) precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 onwhich the feet 68 of subsystem 34 can mount, and (5) a tank 58 forcontaining the electrolyte 16. Subsystems 34 and 36 also includeappropriate electrical connections (not shown) for connecting to anappropriate power source for driving the CC masking process.

The blanket deposition subsystem 38 is shown in the lower portion ofFIG. 3(b) and includes several components: (1) an anode 62, (2) anelectrolyte tank 64 for holding plating solution 66, and (3) frame 74 onwhich the feet 68 of subsystem 34 may sit. Subsystem 38 also includesappropriate electrical connections (not shown) for connecting the anodeto an appropriate power supply for driving the blanket depositionprocess.

The planarization subsystem 40 is shown in the lower portion of FIG.3(c) and includes a lapping plate 52 and associated motion and controlsystems (not shown) for planarizing the depositions.

In addition to teaching the use of CC masks for electrodepositionpurposes, the '630 patent also teaches that the CC masks may be placedagainst a substrate with the polarity of the voltage reversed andmaterial may thereby be selectively removed from the substrate. Itindicates that such removal processes can be used to selectively etch,engrave, and polish a substrate, e.g., a plaque.

The '630 patent further indicates that the electroplating methods andarticles disclosed therein allow fabrication of devices from thin layersof materials such as, e.g., metals, polymers, ceramics, andsemiconductor materials. It further indicates that although theelectroplating embodiments described therein have been described withrespect to the use of two metals, a variety of materials, e.g.,polymers, ceramics and semiconductor materials, and any number of metalscan be deposited either by the electroplating methods therein, or inseparate processes that occur throughout the electroplating method. Itindicates that a thin plating base can be deposited, e.g., bysputtering, over a deposit that is insufficiently conductive (e.g., aninsulating layer) so as to enable subsequent electroplating. It alsoindicates that multiple support materials (i.e. sacrificial materials)can be included in the electroplated element allowing selective removalof the support materials.

Another method for forming microstructures from electroplated metals(i.e. using electrochemical fabrication techniques) is taught in U.S.Pat. No. 5,190,637 to Henry Guckel, entitled “Formation ofMicrostructures by Multiple Level Deep X-ray Lithography withSacrificial Metal layers”. This patent teaches the formation of metalstructure utilizing mask exposures. A first layer of a primary metal iselectroplated onto an exposed plating base to fill a void in aphotoresist, the photoresist is then removed and a secondary metal iselectroplated over the first layer and over the plating base. Theexposed surface of the secondary metal is then machined down to a heightwhich exposes the first metal to produce a flat uniform surfaceextending across the both the primary and secondary metals. Formation ofa second layer may then begin by applying a photoresist layer over thefirst layer and then repeating the process used to produce the firstlayer. The process is then repeated until the entire structure is formedand the secondary metal is removed by etching. The photoresist is formedover the plating base or previous layer by casting and the voids in thephotoresist are formed by exposure of the photoresist through apatterned mask via X-rays or UV radiation.

Even though electrochemical fabrication methods as taught and practicedto date, have been proposed for the production of structures (i.e.devices, parts, components, etc.) in a variety of fields andapplications and by a variety of methods, a need exist in the field formethods that can produce structures with desired configurations withreduced fabrication time, reduced fabrication cost, and/or improvedprocess reliability.

SUMMARY OF THE DISCLOSURE

It is an object of some embodiments of various aspects of the inventionto provide reduced layer formation time when forming a structure from aplurality of adhered layers.

It is an object of some embodiments of various aspects of the inventionto overall fabrication time while working with layers of a fixedthickness.

It is an object of some embodiments of various aspects of the inventionto reduce the amount of one or more structural or sacrificial materialsused during formation of a structure or device.

It is an object of some embodiments of various aspects of the inventionto reduce the amount of a second material that is deposited on a firstmaterial during formation of a layer of a structure or device.

It is an object of some embodiments of various aspects of the inventionto improve process reliability by minimizing wear of tools used inplanarizing layers of material.

Other objects and advantages of various aspects of the invention will beapparent to those of skill in the art upon review of the teachingsherein. The various aspects of the invention, set forth explicitlyherein or otherwise ascertained from the teachings herein, may addressany one of the above objects alone or in combination, or alternativelyit may not address any of the objects set forth above but insteadaddress some other object of the invention which may be ascertained fromthe teachings herein. It is not intended that all of these objects beaddressed by any single aspect of the invention even though that may bethe case with regard to some aspects.

In a first aspect of the invention a method for forming at least aportion of a three-dimensional structure from a plurality of stacked andadhered layers, includes: (A)depositing and patterning a firstconductive material on a substrate or previous layer to obtain a desiredpattern having at least one protrusion of the first conductive materialhaving a surface and at least one opening extending from the surfacethrough a thickness of the first conductive material to the substrate orpreviously formed layer; (B) treating the surface of the firstconductive material to decrease susceptibility of the surface to receivea second conductive material which is to be deposited; (C) depositingthe second conductive material, such that deposition occurs with ahigher selectivity to one or more regions defined by the at least oneopening, wherein the selectivity results, at least in part, from thetreating of the surface of the first conductive material; (D) removingthe effect of the treating of the surface of the first conductivematerial;(E) repeating elements (a)-(d) such that a plurality of stackedlayers are adhered to successively formed layers to form the at leastportion of the three-dimensional structure.

In a second aspect of the invention a method for forming at least aportion of a three-dimensional structure from a plurality of stacked andadhered layers, includes: (A) depositing and patterning a firstconductive material on a substrate or previous layer to obtain a desiredpattern having at least one protrusion of the first conductive materialhaving a surface and at least one opening extending from the surfacethrough a thickness of the first conductive material to the substrate orpreviously formed layer; (B) treating the surface of the firstconductive material to form a coating on the first conductive materialwhich may be removed from the first material along with any secondconductive material which may be deposited onto the coating; (C)depositing the second conductive material at least into the at least oneopening; (D) removing the coating from the surface of the firstconductive material along with any second conductive material depositedthereon; (E) repeating elements (a)-(d) such that a plurality of stackedlayers are adhered to successively formed layers to form the at leastportion of the three-dimensional structure.

In a third aspect of the invention a method for forming at least aportion of a three-dimensional structure from a plurality of stacked andadhered layers, includes: (A) depositing and patterning a firstconductive material on a substrate or previous layer to obtain a desiredpattern having at least one protrusion of the first conductive materialhaving a surface and at least one opening extending from the surfacethrough a thickness of the first conductive material to the substrate orpreviously formed layer; (B) forming a dielectric coating on the surfaceof the first conductive material to decrease susceptibility of thesurface to receive a second conductive material which is to bedeposited; (C) depositing the second conductive material, such thatdeposition occurs with a higher selectivity to one or more regionsdefined by the at least one opening, wherein the selectivity results, atleast in part, from the treating of the surface of the first conductivematerial; (D) removing the effect of the treating of the surface of thefirst conductive material; (E) repeating elements (a)-(d) such that aplurality of stacked layers are adhered to successively formed layers toform the at least portion of the three-dimensional structure.

In a fourth aspect of the invention a method for forming at least aportion of a three-dimensional structure from a plurality of stacked andadhered layers, includes: (A) depositing and patterning a firstconductive material on a substrate or previous layer to obtain a desiredpattern having at least one protrusion of the first conductive materialhaving a surface and at least one opening extending from the surfacethrough a thickness of the first conductive material to the substrate orpreviously formed layer; (B) treating the surface of the firstconductive material to decrease susceptibility of the surface to receivea second material which is to be deposited; (C) depositing the secondmaterial, such that deposition occurs with a higher selectivity to oneor more regions defined by the at least one opening, wherein theselectivity results, at least in part, from the treating of the surfaceof the first conductive material; (D) removing the effect of thetreating of the surface of the first conductive material; (E) repeatingelements (a)-(d) such that a plurality of stacked layers are adhered tosuccessively formed layers to form the at least portion of thethree-dimensional structure.

A fifth aspect of the invention a method for forming at least a portionof a three-dimensional structure from a plurality of stacked and adheredlayers, includes: (A) depositing and patterning a first conductivematerial on a substrate or previous layer to obtain a desired patternhaving at least.one protrusion of the first conductive material having asurface and at least one opening extending from the surface through athickness of the first conductive material to the substrate orpreviously formed layer; (B) treating the surface of the firstconductive material to form a coating on the first conductive materialwhich may be removed from the first material along with any secondmaterial which may be deposited onto the coating; (C) depositing thesecond material at least into the at least one opening; (D) removing thecoating from the surface of the first conductive material along with anysecond material deposited thereon; (E) repeating elements (a)-(d) suchthat a plurality of stacked layers are adhered to successively formedlayers to form the at least portion of the three-dimensional structure.

Further aspects of the invention will be understood by those of skill inthe art upon reviewing the teachings herein. Other aspects of theinvention may involve combinations of the above noted aspects of theinvention and/or addition of various features of one or more embodimentsto these aspects. Other aspects of the invention may involve apparatusconfigured to implement one or more of the above method aspects of theinvention. These other aspects of the invention may provide variouscombinations of the aspects presented above as well as provide otherconfigurations, structures, functional relationships, and processes thathave not been specifically set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a)-1(c) schematically depict side views of various stages of aCC mask plating process, while FIGS. 1(d)-(g) schematically depict aside views of various stages of a CC mask plating process using adifferent type of CC mask.

FIGS. 2(a)-2(f) schematically depict side views of various stages of anelectrochemical fabrication process as applied to the formation of aparticular structure where a sacrificial material is selectivelydeposited while a structural material is blanket deposited.

FIGS. 3(a)-3(c) schematically depict side views of various examplesubassemblies that may be used in manually implementing theelectrochemical fabrication method depicted in FIGS. 2(a)-2(f).

FIGS. 4(a)-4(i) schematically depict the formation of a first layer of astructure using adhered mask plating where the blanket deposition of asecond material overlays both the openings between deposition locationsof a first material and the first material itself.

FIG. 5(a) depicts six operations associated with an embodiment of anaspect of the invention where two different flow paths may be followedwhen performing a second and a third operation.

FIG. 5(b) depicts several example implementations of Operation 1 of FIG.5(a).

FIG. 5(c) depicts several example implementations of Operation 2 of FIG.5(a) wherein any mask used during the deposition of Operation 1 of FIG.5(a) is removed prior to performance of Operation 2.

FIG. 5(d) depicts several example implementations of Operation 2 of FIG.5(a) wherein any mask used during the deposition of Operation 1 of FIG.5(a) remains in place during performance of Operation 2.

FIG. 5(e) depicts two example implementations of Operation 3 of FIG.5(a).

FIG. 6 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein a 1^(st) conductive material is overcoated with a dielectric material prior to depositing a second materialaround the sides of the first conductive material.

FIGS. 7(a)-7(i) provide exemplary schematic illustrations of side viewsof various stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 6.

FIG. 8 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein a mask is formed over a blanketdeposited first conductive material and the first conductive material isselectively etched to form openings for receiving deposition of a secondmaterial.

FIGS. 9(a)-9(f) provide exemplary schematic illustrations of side viewsof various stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 8.

FIG. 10 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein a mask is used to selectively etchopenings into a first conductive material in preparation for depositionof a second material.

FIGS. 11(a)-11(f) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 10 wherea conformable contact mask is used for selective patterning.

FIG. 12 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein a mask is used in the selectivedeposition of a first conductive material over which a dielectricmaterial is deposited and patterned prior to depositing a secondmaterial.

FIGS. 13(a)-13(h) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 12 wherea conformable contact mask is used for selective patterning.

FIG. 14 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein a patterned first dielectric is used tocontrol the deposition location of a first conductive material andwherein a second dielectric material is applied and patterned on thefirst conductive material and where the first dielectric material isremoved and a second material deposited.

FIGS. 15(a)-15(g) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 14.

FIG. 16 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment of anaspect of the invention wherein the process is generalized to allow thedeposition of more than two conductive materials.

FIGS. 17(a)-17(l) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 16.

FIGS. 18(a)-18(f) provide schematic illustrations of side views of thestates of a process that may be used in limiting or eliminating thedeposition of a second conductive material above deposits of a firstconductive material according to an alternative embodiment of theinvention wherein a thin layer of a selective conductive material islocated above the surface of the first conductive material wherein theselected conductive material is a material that does not readily exceptelectrodepositions of other conductive materials.

DETAILED DESCRIPTION

FIGS. 1(a)-1(g), 2(a)-2(f), and 3(a)-3(c) illustrate various features ofone form of electrochemical fabrication that are known. Otherelectrochemical fabrication techniques are set forth in the '630 patentreferenced above, in the various previously incorporated publications,in various other patents and patent applications incorporated herein byreference, still others may be derived from combinations of variousapproaches described in these publications, patents, and applications,or are otherwise known or ascertainable by those of skill in the artfrom the teachings set forth herein. All of these techniques may becombined with those of the various embodiments of the inventionexplicitly set forth herein to yield enhanced embodiments. Still otherembodiments may be derived from combinations of the various embodimentsexplicitly set forth herein.

FIGS. 4(a)-4(i) illustrate various stages in the formation of a singlelayer of a multi-layer fabrication process where a second metal isdeposited on a first metal as well as in openings in the first metalwhere its deposition forms part of the layer. In FIG. 4(a), a side viewof a substrate 82 is shown, onto which patternable photoresist 84 iscast as shown in FIG. 4(b). In FIG. 4(c), a pattern of resist is shownthat results from the curing, exposing, and developing of the resist.The patterning of the photoresist 84 results in openings or apertures92(a)-92(c) extending from a surface 86 of the photoresist through thethickness of the photoresist to surface 88 of the substrate 82. In FIG.4(d), a metal 94 (e.g. nickel) is shown as having been electroplatedinto the openings 92(a)-92(c). In FIG. 4(e), the photoresist has beenremoved (i.e. chemically stripped) from the substrate to expose regionsof the substrate 82 which are not covered with the first metal 94. InFIG. 4(f), a second metal 96 (e.g., silver) is shown as having beenblanket electroplated over the entire exposed portions of the substrate82 (which is conductive) and over the first metal 94 (which is alsoconductive). FIG. 4(g) depicts the completed first layer of thestructure which has resulted from the planarization of the first andsecond metals down to a height that exposes the first metal and sets athickness for the first layer. In FIG. 4(h) the result of repeating theprocess steps shown in FIGS. 4(b)-4(g) several times to form amulti-layer structure are shown where each layer consists of twomaterials. For most applications, one of these materials is removed asshown in FIG. 4(i) to yield a desired 3-D structure 98 (e.g. componentor device).

In some embodiments, a method is provided for limiting or preventing theelectrodeposition (e.g. electroplating or electrophoretic deposition) orthe electroless deposition of a second material (e.g. a conductivematerial or a particulate conductive or dielectric material) on top of afirst conductive material, and more particularly, to a method ofproducing layers enhanced by such completely or partially inhibitedover-deposition in a multi-layer fabrication process such as anelectrochemical fabrication process (e.g. EFAB® process) whereelectrochemical deposition and etching techniques are used to formthree-dimensional structures. Some embodiments provide a simple andeconomical technique for achieving a blanket deposition of a secondmaterial in such a way that the deposition becomes, in effect, aselective deposition, whereby a second material is only deposited intothose regions in which a first material is not deposited. The advantagesof some embodiments, may include (1) reduction in fabrication time, (2)reduction in planarization time, (3) reduction in cost of planarization,and/or (4) reduction in the cost of the second material that must beused in achieving a desired deposition.

In some embodiments, a method is provided for enhancing the ability toseparate a second material deposited onto a first material by eitherdecreasing the time to complete such separation or by simplifying theprocess associated with such separation.

FIG. 5(a) provides a flowchart depicting six operations associated witha generalized embodiment. Since some embodiments are directed todecreasing the receptiveness of a first conductive material to receivingdeposits of a second material (e.g. a second conductive material) andsince other embodiments are directed to enhancing the ease of, ordecreasing the time of, separating a second material from the firstmaterial, the flowchart of FIG. 5(a) depicts two alternative flow paths.Both alternatives include operations 1, 4, 5 and 6. The first flow pathadditionally includes Operation 2(1) and Operation 3(1). The second flowpath additionally includes Operation 2(2) and Operation 3(2). Of coursein embodiments where the second material is a dielectric or where thesubstrate, or previously formed layer, is a dielectric or includesregions of dielectric, the generalized embodiment of FIG. 5 may be madeto include additional operations associated with seed layer depositionand/or seed layer removal. Further details about use of seed layers andremoval of seed layers may be found in various patents and patentapplications incorporated herein by reference. In particular thereader's attention is specifically directed to U.S. patent applicationNo. XX/XXX,XXX (corresponding to Microfabrica Docket No. P-US099-A-MF),filed concurrently herewith, by Lockard et al. and entitled “Methods forElectrochemically Fabricating Structures Using Adhered Masks,Incorporating Dielectric Sheets, and/or Seed layers That Are PartiallyRemoved Via Planarization”. For example, if needed, a first seed layermay be supplied before Operation 1 and exposed portions of it may beremoved between Operation 1 and 2(1) or 2(2) and a second seed layer, ifneeded, may be supplied before Operation 2(1) or 2(2) or betweenOperations 2(1) or 2(2) and operations 3(1) or 3(2), respectively.

Operation 1, indicated by reference number 201, calls for the formationof a patterned deposit of a first conductive material (CM1) on asubstrate or previously formed layer. The patterning of the firstconductive material results in at least one opening, void, or aperturethat extends from a distal surface of the first conductive materialthrough its thickness to a surface of the substrate or to a surface of apreviously formed layer. According to the first flow path, the processproceeds from Operation 1 to Operation 2(1), as indicated by referencenumber 202′.

In Operation 2(1) the distal surface of the first conductive material istreated to decrease its receptiveness to receiving a deposition of asecond material (M2). In some embodiments the second material may be aconductive material while in other embodiments it may be a dielectricmaterial such as a particulate material that may be charged anddeposited using electrophoretic techniques. When the second material isa dielectric, its application will probably not require a seed layer,though its use on one layer may require the use of a seed layer on thesubsequent layer prior to electrochemically depositing a conductivematerial.

After completion of Operation 2(1), the process proceeds to Operation3(1), as indicated by reference number 203′. In Operation 3(1) thesecond material is deposited into at least one opening that extendsthrough the first conductive material. The deposition of the secondmaterial occurs with higher selectivity toward being deposited throughthe opening onto the substrate, or previously formed layer, as opposedto being deposited onto the first conductive material.

After Operation 3(1) is completed, the process proceeds to Operation 4,indicated by reference number 204, where the treatment of the firstconductive material as performed in Operation 2(1) is either removed orotherwise deactivated in preparation for adding additional layers ofmaterial. In addition, Operation 4 calls for the optional planarizationof the first conductive material and the second material to bring themto a common height and/or to bring the overall layer height to a desiredlevel of accuracy.

The process next proceeds to Operation 5, as indicated by referencenumber 205, which calls for the repetition of Operations 1 through 4,one or more times so as to build up a multi-layer structure. Inembodiments where one the second material on the just formed layer is adielectric, use of a seed layer may be required during formation of thenext layer.

After completion of the formation of each layer, the process proceeds toOperation 6, as indicated by reference number 206. Operation 6 calls forthe optional, partial or complete separation of one of the materials(i.e. a sacrificial material) from the other material (i.e. a structuralmaterial) so that a desired structure formed from the structuralmaterial (e.g. one of the first conductive material or the secondmaterial) is released from a sacrificial material (e.g. the other of thefirst conductive material or the second material) which was used as aconvenience during the fabrication process. In some embodiments, boththe first and second materials may be structural materials and both mayremain as portions of the final structure.

In the alternative flow path of the process of FIG. 5(a), the processflows from Operation 1 to Operation 2(2), as indicated by referencenumber 202″, where a treatment of a surface of the first conductivematerial is called for so as to enhance the ease of separating anysecond material that happens to become located on the first conductivematerial (e.g. located on the treatment that is located on the firstconductive material). In some embodiments such treatments involve theformation of a coating on the first conductive material which coatingcan be lifted off the first conductive material along with any secondmaterial that happens to be located thereon.

The process then proceeds to Operation 3(2) as indicated by referencenumber 203′, which calls for the deposition of a second material intothe openings in the first conductive material where the deposition mayalso result in the second material becoming located on the treated firstconductive material.

The process then proceeds to Operations 4, 5, and 6 as already discussedand as indicated by reference number 204.

In some alternative embodiments, one or more additional conductivematerials may be added to the layer formation process. In thesealternative embodiments some of the surfaces the conductive materialsare treated prior to deposition of one or more subsequent materials suchthat the deposition(s) of one or more material favors selectedlocations. In some embodiments, deposition of some materials may beallowed to occur on top of other materials that form part of a layer. Insome embodiments, some deposited materials need not be conductivematerials. As noted above when non-conductive materials are usedattention must be paid to the whether or not subsequent depositions willrequire the use of seed layers. Furthermore, attention may be requiredso that portions of such seed layers will be appropriately removed, e.g.so that conductive seed layer material is not located between overlyinglayers of dielectric material.

In some alternative embodiments some of operations (1)-(6) need not becompleted prior to beginning what are listed as subsequent operations assome processes may be performed in parallel or as some operations shareprocesses or portions of processes.

FIG. 5(b) sets forth a number of example processes that may be used inperforming Operation 1. A first example 221, Example A, calls for theperformance of Operation 1 by selectively depositing the firstconductive material using a contact mask. The contact mask may be of theconformable type as discussed herein elsewhere as well as in variouspatent applications and publications that have been incorporated hereinby reference. The contact mask may be of the non-conformable type asdescribed in U.S. patent application 60/429,484 as mentioned in thetable of co-pending applications and patents set forth herein after.

A second example 222, Example B, calls for the performance of Operation1 by selectively depositing the first conductive material using athrough-mask plating operation (i.e. an adhered mask plating operations)such as that illustrated in FIG. 4(d).

A third example 223, Example C, calls for the performance of Operation 1by performing a blanket deposition of the first conductive materialfollowed by the selective etching of the deposited material using acontact mask (e.g. using a conformable contact mask or non-conformablecontact mask). The blanket deposition may be performed by anyappropriate process. For example, the blanket deposition may beperformed by electroplating, electrophoretic deposition, electrolessdeposition, direct metallization, various types of spray metaldeposition, sputtering, or the like. The etching performed through thecontact mask may be performed using a variety of processes. For examplethe etching may be performed by chemical etching or electrochemicaletching.

A fourth example 224, Example D, calls for the performance of Operation1 by blanket deposition of the first conductive material followed by aselective etching of the deposited material via a patterned mask that isadhered to a surface of the first conductive material. The patternedmask may be formed of a variety of materials using a variety ofprocesses. For example, the patterned mask may be formed by theselective ablation of a dielectric material that is adhered to the firstconductive material. The ablation may be performed using a computercontrolled laser scanning system or by exposure through a mask. In otherembodiments, an etching mask may be formed using a positive or negativephotoresist that is supplied in liquid form or sheet form (e.g. dryfilm) and adhered to the first conductive material or that is formed onthe surface of the first conductive material. The photoresist may bepatterned using exposure applied through a photomask and then developedto bring out the patterning. The etching operation may also be performedin a variety of ways, including, for example, chemical etching,electrochemical etching, or reactive ion etching.

A fifth example 225, Example E, calls for the performance of Operation 1by performing a blanket deposition of the first conductive materialfollowed by the selective removal of the deposited material by ablation.

FIG. 5(c), provides a number of examples of how Operations 2(1) and 2(2)may be performed. The examples of FIG. 5(c) are primarily focused ontreatments that would be performed on patterned first conductivematerial that has been released (e.g. after removal of any mask that wasused for the patterning of the first conformable material).

A first example 231, Example A, calls for performance of the treatmentby stamping a solidifiable material onto the surface of the firstconductive material. Stamping may be performed by use of relative motionbetween a support structure holding a transferable solidifiable materialand the first conductive material. The stamping operation transferssufficient solidifiable material from the support to the firstconductive material after which the transferred material is solidified.The stamping process may be repeated one or more times if sufficientmaterial is not transferred from a single stamping operation. Thetransfer of material only occurs where contact is made and as suchcontrolled motion may be used to ensure that the solidifiable materialonly contacts the surface of the first conductive material. Thetransferable material may take on a variety of forms. For example it maybe a liquid, powder or paste-like material. The solidification processused may be selected from any processes that are appropriate for theselected transferable material. For example, for some materialssolidification may be accomplished by supplying heat, subjecting thematerial to pressure or to a vacuum, removing a reaction inhibitor (e.g.oxygen for some types of polymerization reactions), supplying a reactioncatalyst, or exposing the material to appropriate radiation. Furtherteachings about transferring materials are provided in previouslyreferenced U.S. patent application No. XX/XXX,XXX (corresponding toMicrofabrica Docket No. P-US099-A-MF).

A second example 232, Example B, calls for the performance of thetreatment by transferring a solidifiable material to the surface of thefirst conductive material by use of a roller. After transfer, thetransferred material is solidified to form an insulative coating overthe surface or surfaces of the first conductive material. In thisexample, as well as in the previous example, electrostatic attractionmay be used to aid in the transfer process, this may be performed byplacing a charge on the material to be transferred and placing anopposite charge or appropriate potential on the first conductivematerial or more simply be allowing the charge on the transferablematerial to induce a polarization in the charges in the first conductivematerial to cause an attractive force. In other alternative embodiments,repulsive electrostatic forces may be used in aiding the transfer ofmaterial.

A third example 233, Example C, is also provided. In this example asheet or coating of photoresist is applied to the surface of the firstconductive material. The sheet or coating is then dried or cured (ifnecessary), exposed, and developed so that a patterned coating over thesurface of the first conductive material is obtained and such thatphotoresist is removed from regions that do not overlay the surface ofthe first conductive material.

A fourth example 234, Example D, applies and adheres a sheet of materialto the surface of the first conductive material and then patterns thesheet by removing those portions of the sheet that do not overlay thesurface of the first conductive material. This removal process may occurin a number of different ways. For example, the removing process mayoccur by applying a pressure, e.g. via gas, liquid or particles, againsta surface of the sheet. This pressure may be used to sheer off thoseportions of the sheet that are not supported by and bound to the firstconductive material. In some alternative embodiments the binding of thesheet to the surface of the first conductive material may occur afterselected portions of the sheet have been removed. If the sheeringprocess does not completely remove the separated portions of the sheetfrom the partially formed structure, a vacuum force or a gas or liquidstream may be used to complete the removal process.

A fifth example 235, Example E, calls for the performance of Operation 2by contacting a solidifiable material, which is held by a support, tothe surface of the first conductive material and then lifting off orpeeling back the support. The lifting or peeling separates thoseportions of the solidifiable material that did not contact the patternedfirst conductive material from those portions of the solidifiablematerial that did contact the first conductive material. In the processof lifting off or peeling back, the non-contacted portions of thesolidifiable material stay with the support while the contacted portionspreferentially remain on the first conductive material. Before or afterthe lifting or peeling is performed, the solidifiable material may besolidified and adhered to the first conductive material.

A sixth example 236, Example F, performs Operation 2 by transferring apre-patterned dielectric material from a support to the surface of thefirst conductive material. The patterned dielectric material is placedin contact with the surface of the first conductive material and thesupport is lifted off or peeled back leaving the patterned dielectricmaterial on the surface of the first conductive material. The patterneddielectric may be bonded to the first conductive material before orafter the lifting or peeling off. In some embodiments a partial bondingmay be performed before the lift off or peeling away. Additional bondingmay be performed after lifting or peeling. In some embodiments, thetransferred dielectric may overhang the edges of the first conductivematerial slightly (so long as they do not interfere with the filling ofthe voids or openings adjacent to those regions occupied by the firstconductive material.

A seventh example 237, Example G, performs Operation 2 by applying afirst dielectric material to the substrate so that it fills the openingsin the first conductive material as well as potentially overlaying thesurface of the first conductive material. The first dielectric materialand possibly the first conductive material are planarized to expose thefirst conductive material. A second dielectric material is deposited orapplied selectively over the first conductive material, e.g. byelectrophoretic deposition or electrostatically aided deposition, thesecond dielectric material is solidified and the first dielectricmaterial removed.

FIG. 5(d) provides a number of additional examples of how the treatingcalled for in Operation 2 might be performed. In these examples, it isassumed that the first conductive material was either deposited througha mask and that the mask remains in place or that after patterning ofthe first conductive material a masking material was made to surroundit.

A first example 241, Example A, calls for the performance of thetreatment of Operation 2 by electrophoretically depositing a dielectricmaterial preferentially to the surface of the first conductive material.In this example, the height of the mask preferably extends beyond theheight of the first conductive material such that a partial opening oropenings remain in the patterned mask into which the dielectric materialis deposited. In alternative embodiments, the height of the firstconductive material may be substantially equal to or slightly in excessof the height of the mask.

A second example 242, Example B, calls for the performance of Operation2 by spreading or spraying a dielectric material over the surface of thefirst conductive material so as to at least partially fill any openingsthat exist adjacent to the surface of the first conductive material as aresult of a height differential between the first conductive materialand the mask material. To enhance the selectivity of the net depositionof the dielectric material, a wiper blade, squeegee, air knife, or thelike may be moved across the surface of the mask to at least partiallyremove dielectric material deposited to undesired locations (i.e.locations not in immediate proximity to the surface of the firstconductive material). Prior to the performing the treatment process ofthis example of Operation 2, and most preferably prior to the patterningof the mask material that surrounds the first conductive material, themask material may be planarized to provide a relatively smooth surface.The smooth surface may be beneficial in enhancing the selectivityprovided by any wiping process that is intended to remove dielectricmaterial from the surface of the mask material. The deposited dielectricmaterial may be converted to a solid insulative material using a varietyof processes. In some alternative embodiments the existence of anopening in the mask material that surrounds a deposition of the firstconductive material may not be necessary so long as the removal of themasking material can be made to occur in those regions where thedielectric material overlays the masking material.

A third example 243, Example C, calls for the performance of thetreatment using electrostatic effects. The electrostatic effects may beused to preferentially direct a dielectric material to the surface ofthe first conductive material, to preferentially repel a dielectricmaterial from the surface of the masking material, and/or to selectivelybond a dielectric material, at least temporarily, to the surface of thefirst conductive material. In this example various dielectric materialsmay be used. These materials may be in a liquid or powder form and theymay include, among other things, xerographic toners or powder coatingmaterials. Prior to dispensing or applying the dielectric material, thematerial is provided with a desired electric charge. One or both of thesurfaces of the first conductive material and/or the mask material mayalso be provided with an appropriate charge or potential.

For example, the mask material may be supplied with a charge that is ofthe same type as that applied to the dielectric material thereby causingthe dielectric material and the masking material to repel one another.The surface of the first conductive material may have a charged inducedin it by the presence of the charge on the dielectric material oralternatively it may be supplied with a potential that aides inenhancing the attraction between the conductive material and thedielectric material. In some alternatives of this example, the use ofelectrostatic forces may not significantly aid in directing thedielectric to or away from certain locations but instead may be used tocause temporary adhesion between the dielectric and a desired location.In such cases, the dielectric material may be applied in a blanketfashion and then removed from undesired locations. The removal fromundesired locations may be aided by the use of gravity, magneticbrushing, gas flow, or other stimulation. After a selectively locatingthe dielectric material, the dielectric material is solidified and maybe more firmly adhered to the first conductive material so as to form aninsulating coating over the surface of the first conductive material.The solidification or curing of the dielectric material may occur invarious ways.

A fourth example, Example D, of a treatment operation is provided asindicated by reference number 244. In this example, a blanket depositionof a dielectric material is made onto the surface of the firstconductive material as well as onto the surface of the substrate orpreviously formed layer. A mask is placed over the dielectric materialand the dielectric material is selectively etched. The etching may occurin a variety of manners such as by chemical etching or electrochemicaletching. In some alternative embodiments, instead of using a mask topattern the dielectric material, ablation may be used, e.g. by anablating laser beam that is computer controlled.

A fifth example, Example E, is provided as indicated by reference number245. In this example a supplemental sheet or coating of photoresist isapplied to the surface of the first conductive material and the mask. Inthis example the supplemental photoresist is exposed and developed toleave a pattern of photoresist only on the surface of the firstconductive material. In this example the mask material is also removedin preparation for deposition of a second conductive material. Dependingon the composition and processing of the mask material and on thecomposition of the supplemental photoresist, removal of the maskmaterial may occur simultaneously with the development of thesupplemental photoresist. For example, if the mask is formed from apositive photoresist and the supplemental resist is also of the positivetype, exposure of the supplemental resist in regions not over laying thefirst conductive material may result in sufficient exposure of the maskmaterial to allow simultaneous development and removal of the exposedportions of both the supplemental and mask materials. In anotheralternative, if the mask material is of a positive photoresist while thesupplemental photoresist is of the negative type, the same mask (e.g.photomask) used to create the photoresist mask may be used to expose thesupplemental material thereafter development of the supplementalmaterial may be followed by blanket exposure of the mask material whichis in turn followed by development of the mask material to remove it. Ofcourse, other possibilities may be implemented as alternatives to thisexample.

A sixth example, Example F, is provided as indicated by reference number246 in FIG. 5(d). In this example a selected conductive material isdeposited into the openings in the mask above the first conductivematerial wherein the selected conductive material is chosen because ithas a property that causes it to not readily accept electrodeposits ofother materials (e.g. it may become readily passivated).

An example of such a conductive material is chrome. A deposit willeither not form at all over the shielding material or if it forms, as aresult of the selected material's lack of affinity for receiving thedeposited material, the deposited material will not adhere well and willbe readily removed during a planarization operation without the time oreffort involved in removing a well adhered coating. In otherembodiments, it is believed that titanium may function in a similar way.

A seventh example, Example G, is provided as indicated by referencenumber 247 in FIG. 5(d). In this example the surface of the firstconductive material is modified by chemical treatment so as to make itless susceptible to receiving a coating or at minimum less susceptibleto having a coating adhere tightly to it. Such treatment may involve,for example, the oxidation of the exposed surface of the firstconductive material. This oxidation may occur in a variety of ways, forexample, by application of selected chemicals to the surface of thefirst conductive material, application of an oxygen rich environment,and/or application of heat, pressure, or the like.

FIG. 5(e) sets forth two examples of how Operation 3 may be implementedin depositing the second material.

A first example, Example A, is provided as indicated by reference number251. In this example the second material (e.g. a second conductivematerial) is blanket deposited or may be deposited using some amount ofselectivity. The deposition occurs via an electrodeposition process suchas, for example, electroplating or electrophoretic deposition. The netdeposition however is a selective deposition as a result of thedielectric shielding provided by the treatment performed in operation 2.In alternatives of this example, other forms of deposition may be used.Such forms of deposition may include spray metal deposition usingcharged particles where the charged particles are attracted with thehigher degree of selectivity toward the surface of the first conductivematerial as opposed to a surface of the dielectrically shieldedmaterial.

A second example, Example B, is indicated by reference number 252. Inthis example a blanket deposit of the second material occurs. Theblanket deposition may be performed using a spray coating process or asputtering process where the deposition is not achieved in asignificantly selective manner that would have resulted in material onlybeing deposited on the first conductive material. However, a netselectivity may be achieved in the end as a result of the material beingdeposited on the dielectric being lifted off when the dielectricshielding material is removed. In regions above the dielectric material,the deposited material may be scratched to allow access of a solvent tothe dielectric material

FIG. 6 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to an embodiment whereina first conductive material is over coated with a dielectric materialprior to depositing a second conductive material.

The process of FIG. 6 begins with element 302 which calls for thesupplying of a substrate.

The process then proceeds to element 304 which sets a variable “n” equalto zero. In the process, the variable “n” represents the number of thelayer that is currently being formed and will range from 1 to N (withthe exception of an initialization value that is set at zero) where N isthe layer number associated with the last layer of the structure.

From element 304 the process proceeds to element 306 where the value of“n” is set to “n+1”.

The process then moves on to element 308 which calls for the supplyingand patterning of a first dielectric material (DM1) onto the substrate.The patterned DM1 will include regions having a deposition height of“HDM1” which is greater than a desired layer thickness (LT) and thepatterning will include at least one opening (i.e. aperture or void)that extends from a first (i.e. distal) surface of DM1 through thethickness HDM1 of DM1to the substrate or previously formed layer. Insome embodiments, DM1 may be a photoresist material of either thepositive or negative type which is applied and then dried and bondedprior to patterning by exposure and development. In other embodiments,DM1 may be an ablatable material that is adhered to the surface of thesubstrate or previously formed layer. In still other embodiments, DM1may be supplied in the form of a dry film photoresist having a desiredthickness (e.g. supplied in sheet form with or without a protectivebacking).

From element 308, the process proceeds to element 310 which calls fordeposition of a first conductive material (CM1) into the opening oropenings in DM1. If necessary, before or after the operation of element308, a seed layer may be applied if required for the deposition of thefirst conductive material. If applied after the operation of element308, the portion of the seed layer not located below the firstconductive material may be removed by a planarization operation that mayoccur between operations 312 and 314, otherwise the seed layer may beremoved from the regions to be occupied by a second material by anetching operation that occurs between elements 314 and 316.

The height HCM1 of deposition of CM1 is preferably greater than or equalto LT and is preferably less than or equal to HDM1. In some embodimentsthe deposition of CM1 may be by electroplating. In other embodiments,CM1 may be supplied by electrophoretic deposition or by some otherdeposition process that may take advantage of the dielectric shieldingthat is provided by the masking material which surrounds the perimeterof the region into which CM1 is to be deposited.

Next, the process moves to element 312 which calls for the deposition ofa second dielectric material (DM2). The deposition of DM2 preferablyoccurs in a selective manner which causes DM2 to be located only on theexposed surface of CM1. The thickness HDM2 of DM2 is such that HDM1minus HCM1 is greater than or equal to HDM2. In some embodiments DM2 maybe deposited onto CM1 in a selective manner by electrophoreticdeposition. In other embodiments, other selective deposition processesmay be used such as, an electrostatic aided deposition processes whereparticles of the dielectric material are electrostatically held to thefirst conductive material or are electrostatically preferentiallydirected to CM1.

The process then moves to element 314 which calls for the removal of theDM1 to create at least one opening through CM1. In element 316 a depositof a second material (M2) is formed wherein the deposition haspreferential selectivity for being deposited into the openings asopposed to onto the surface of the CM1. If necessary a seed layer may beformed prior to the deposition of M2, if such a seed layer is needed.The seed layer may later be removed from selected regions by the removaloperation of element 318 or by other operations. The height ofdeposition HM2 of M2 is preferably less than or equal to the sum of HCM1and HDM2. The deposition of M2 may occur in a variety of different waysincluding, for example, via electroplating or electrophoreticdeposition. If the deposit is made by electrophoretic deposition and ifthe deposit is not fully densified, additional operations may beperformed to increase the density of M2 or to otherwise seal M2 fromsignificant undesired infiltration during subsequent processing.

Next, the process moves forward to element 318 which calls for theremoval of DM2 and if necessary for the trimming of the height of CM1and/or M2 so that a net height equal to LT is obtained. As noted, abovethis operation may also be sued to remove any seed layer material thatoverlaid DM2. The removal of DM2 may occur by a different process thanthat used for trimming the CM1 and/or M2 or alternatively, both actionsmay be performed by the same process. For example, planarization vialapping, micro-milling, or fly cutting may be used for both removal ofDM2 and for trimming of the height of the CM1 and M2. Alternatively astripping or etching operation may be used to selectively remove DM2prior to a lapping or other machining operation being used to trim CM1and M2. With the operation or operations of element 318 a layer of thestructure being formed is completed and the process moves to element 320which enquires as to whether the just formed layer “n” is the last layerof the structure. If the answer is “no” the process loops back toelement 306.

If the answer is “yes” the process moves forward to element 322 whichcalls for ending layer formation operations. The process then moves toelement 324 which calls for the performance of any additional operationsnecessary to release and or complete the formation of the structure. Thestructure formed by this process may be a complete or partial structure(e.g. component or device with or without relatively moveable sections).In some embodiments, one of CM1 and M2 is considered a structuralmaterial while the other is considered a sacrificial material. If asacrificial material does exist, an operation performed under thiselement 324 may include the etching away of the sacrificial materialfrom the structural material. Other operations performed under element324 may include packaging of the structure, hermetic sealing of thestructure, creation of electrical connections to the structure and thelike.

From element 324 the process moves to element 326 which calls for theend of processing.

In some alternative embodiments, the process set fourth in elements 308to 318 may be used only to form a portion of the layers that are used increating the three-dimensional structure. Various other alternatives tothis embodiment will be recognized by those of skill in the art uponreviewing the teachings herein. In some alternative embodiments (e.g.those that involving the use of more than two conductive materials orthose that use the dielectric material as part of the layer structure),DM1 may not be completely removed. In some embodiments the height ofdeposition of CM1 may be greater than that of DM1. In some embodimentsthe height of deposition of CM2 may be greater than the combined heightsof CM1 and DM2.

In some embodiments DM1 is a photoresist material that is patternable byan exposure to selected light or radiation followed by a developmentoperation. The exposure may result in regions with enhancedsusceptibility to a developing agent (i.e. positive resist) or enhancedresistivity to such agents (i.e. negative resists). The photoresist maybe completely removed by use of a stripping agent or by use of completeexposure and development in the case of positive resists. In someembodiments, DM1 may be patterned more than once or it may be completelyremoved after a first patterning and development and a secondapplication, exposure, and development may be made to yield a differentpattern.

FIGS. 7(a)-7(i) provide exemplary schematic illustrations of side viewsof various stages involved in the formation of a layer of athree-dimensional structure according to one embodiment that follows theflowchart of FIG. 6.

In FIG. 7(a) a substrate 352 is shown, onto which patternable material354 (e.g., a photoresist) has been deposited as shown in FIG. 7(b). InFIG. 7(c) patternable material 354 has been patterned to yield toproduce openings 362(a)-362(c) within a material 354′. If thepatternable material is a photoresist, patterning may occur by exposingthe material through a photomask and then developing the latent image toproduce apertures 362(a)-362(c). In FIG. 7(d), a first conductivematerial 364 (e.g., a metal such as copper) has been deposited into theopenings. The deposition of the first conductive material may occur, forexample, by electrodeposition, such as electroplating. In FIG. 7(e), anelectrophoretically-depositable material 368 has beenelectrophoretically deposited within apertures 362(a)-262(c) on thefirst conductive material 364 to produce an insulating coating 368. Theproduction of the insulating coating may require additional processingto improve consolidation of the material. Such consolidation may beachieved by, for example, applying heat and/or pressure to the depositedmaterial 368 to yield coating 368′. Examples of suitable materialsinclude suspensions of charged insulating polymer particles (e.g.,electrodepositable paints and photoresists) and ceramics. Commercialexamples, of such treatment materials include electrodepositablephotoresists such as Electroimage® Plus manufactured by PPG Industries,and PEPR® 2400 and EAGLE® 2100 ED manufactured by Shipley Ronal. Ifmaterial 368′ is substantially insulating, it will normally beelectrodeposited to form a relatively thin substantially continuous(pinhole-free) coating which is uniform in thickness, at which point theinsulating nature of the material will prevent further deposition fromoccurring. Electrophoretically-depositable material 368 should becompatible with the patterned material 354′. The electrodeposition bathused to deposit material 364 and any associated process steps should notsignificantly degrade material 354′. Moreover, the chemicals used toremove material 354′ as well as any involved processes should notsignificantly degrade material 368′.

In FIG. 7(f), patternable material 354′ has been removed (e.g., by useof a chemical stripper) to expose regions of the substrate 352, or of apreviously formed layer, which are not covered with first conductivematerial 364 or electrophoretically-depositable material 368. In FIG.7(g), a second material 366 (e.g., a metal such as nickel) has beendeposited. Since the upper surface of first conductive material 364 iscovered with material 368, no deposition of the second material 366occurs on this surface, and deposition of material 366 is restricted toregions of substrate 352 which previously had been covered withpatternable material 354′. The amount of the second material 366 that isdeposited according to this embodiment may be significantly reducedcompare to that of material 116 of FIG. 4(f).

In FIG. 7(h), electrophoretically-deposited material 368 has beenremoved (e.g., by chemically stripping if material 368 was aphotoresist). This step may not be required, since the subsequentplanarization step may be sufficient to remove material 368 by use ofmechanical or chemical-mechanical action. Finally, in FIG. 7(i) thelayer has been planarized to produce trimmed materials 366′ and 364′.This planarization process is optional as it may not be required ifdeposition depths can be precisely enough controlled. The planarizationis not necessary to remove material 366 from material 364 but insteadmay be performed if necessary to establish a layer of the desiredthickness, flatness, or surface finish. Such a planarization operationcan be performed in less time, and with less use of consumable materials(e.g., slurry, lapping plates, and/or polishing pads) than aplanarization operation that must also remove material 366 that islocated above material 364.

FIG. 8 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to another embodimentwherein a mask is formed over a blanket deposited first conductivematerial and the first conductive material is selectively etched to formopenings for receiving deposition of a second material. The flowchart ofFIG. 8 includes a number of elements which are identical tocorresponding elements found in the flowchart of FIG. 6. These elementsare referenced using identical reference numbers to those set forth inFIG. 6. As these common elements have already been discussed inassociation with FIG. 6 no detailed description will be provided. Theprocess of FIG. 8 begins with elements 302, 304, and 306 just as did theprocess of FIG. 6.

After element 306, the process proceeds to element 408 which calls forthe deposition of a first conductive material (CM1) onto the substrateor previously formed layer. The height HCM1 of the deposited firstconductive material is preferably greater than or equal to a desiredlayer thickness LT. In some embodiments it may be preferable to use adeposited height slightly greater than layer thickness to allow one ormore planarization operations to trim the deposit by small amounts toensure appropriate exposure of the material to depositions that willoccur in association with the deposition of subsequent layers. In otherembodiments, such excess thickness may not be required. The depositioncalled for in element 408 is preferably unpatterned blanket deposition.In some alternative embodiments, inaccuracies in deposition height maymake it desirable to planarize the surface of CM1 to give it a desireddegree of uniformity and/or to bring the deposition to a desired level.In other embodiments, a thickness of deposition may be detected and usedin subsequent operations.

Next, the process moves forward to element 410 which calls for theapplying and patterning of a dielectric material onto the surface of thefirst conductive material. The dielectric material is provided with aheight HDM and is patterned so that at least one opening extends from adistal surface of the dielectric material through the height HDM to asurface of the first conductive material. At least one opening is formedin the dielectric material so that the dielectric material may be usedas an etching mask for patterning the first conductive material. Thefirst conductive material will be patterned in preparation fordepositing a second material (into the openings in the first conductivematerial that result from the patterning) that will form part of thelayers that are built up to form a desired three-dimensional structure.The patterning of the dielectric material is based on the crosssectional pattern or a portion of the cross-sectional pattern of thestructure that is being formed that is associated with the current layer(i.e. the nth layer) that is being processed. Data corresponding to thepattern may be derived manually, from a mathematical equation, or byextracting appropriate cross-sectional data from a three-dimensional CADmodel of the structure.

Next, the process moves to element 412 which calls for the selectiveetching of the first conductive material to a depth HCM1+§ (i.e. delta),where § can take on a value ranging from zero up to some desiredfraction of a layer thickness. In the most preferred embodiments thedepth of etching corresponds substantially to the thickness of the firstconductive material HCM1 with possibly a small increment § addedthereto, to ensure that the upper surface of the substrate or previouslyformed layer is reached by the etching operation. In other embodiments,if the first conductive material is a sacrificial material, a very thinfilm of sacrificial material between layers of a structural material maynot be problematic so long as it is thin enough that a post-layerformation etching operation doesn't remove the thin film or otherwisedamage the layer-to-layer adhesion of structural material. The etchingoperation forms at least one opening that extends through the firstconductive material. At the end of the process associated with element412, appropriate openings extend from the surface (e.g. the uppersurface assuming right side up staking of layers will occur) of thefirst conductive material through the thickness HCM1 of the firstconductive material in those regions where the first conductive materialis not protected by the dielectric material of the mask.

The process then continues on to element 316 which calls for thedeposition of a second material (e.g. a second conductive material or anon-conductive material) which deposition will be in effect a selectivedeposition into the openings through the first conductive material (e.g.as a result of an electroplating or electrophoretic deposition process).The minimum height of deposition of the second material brings the uppersurface of the material to a level corresponding to the upper surface ofthe layer thus the minimum deposition height is LT but it may alsorequire an added increment at least as great as § as this is the depthbelow the bottom of the layer that the etching of the first conductivematerial may have produced. As element 316 is similar to that alreadydescribed with regard to FIG. 6 no further description will be given atthis point.

The process continues through elements 318, 320, 322, 324 and 326. Asthese elements were previously described with regard to FIG. 6, nofurther description is believed necessary.

In comparing the flow charts of FIG. 6 and FIG. 8 with the operations ofFIG. 5(a) a distinction between the embodiment of FIG. 6 and theembodiment of FIG. 8 can be seen. In FIG. 6, operation 201 of FIG. 5(a)corresponds to element 308 and 310, operation 202′ corresponds toelements 312 and 314, operation 203′ corresponds to element 316,operation 204 corresponds to element 318 and operation 205 may beconsidered to correspond to elements 320 and 306 as they cause loopingback through elements 308 to 318 so that additional layers may beformed. Finally, operation 206 corresponds to element 324. From thesecorrelations it can be ascertained that each of the operations of FIG.5(a) are performed by distinct elements of FIG. 6.

When making the same operation to element comparison with regard to FIG.8 it can be seen that operations 203′, 204, 205, and 206 correspond toelements that are similar to those associated with FIG. 6. However, inFIG. 8, operation 201 corresponds to a combination of elements 408, 410,and 412, while operation 202′ corresponds with elements 410 and 412which it shares with operation 201. In conclusion the operations of FIG.5(a) are not necessarily completely independent operations, but insteadmust be considered at least in some embodiments as linked and dependentupon one another.

In some embodiments based on the operations of FIG. 8, the dielectricmaterial comprises a photoresist. In some of those embodiments thephotoresist is a positive resist while in some other embodiments thephotoresist may be a negative resist. In some embodiments the dielectricmay be of the liquid type which requires solidification prior toexposure or it may be of the dry film type. In other embodiments thedielectric may be a photopolymer that is in a liquid state at the timeof exposure and which is solidified in response to an exposure. Theremoval of the dielectric may occur by chemical or mechanical means andif by mechanical means it may be by a lapping operation that may be usedto planarize the conductive materials. In some embodiments theconductive materials may be pure metals while in other embodiments theymay be alloys (e.g. such as nickel-phosphor, nickel-cobalt, zinc-tin) orcomposite materials such as filled epoxies. In still other embodimentsvarious features of this embodiment may be replaced by other exemplaryelements set forth in FIGS. 5(b)-5(d), while in still other embodimentsfeatures of this embodiment may be replace by or enhanced with otheroperations that will be apparent to those of skill in the art uponreview of the teachings herein.

Though not illustrated in FIG. 8, if dielectric building materials areused, it may also be necessary to use seed layers to allow deposition ofone or more of the materials. For example, if the second material is adielectric or if the substrate is a dielectric, it may be necessary toform a seed layer prior to performing the operation of element 408. Theetching operation of element 412 may remove portions of the depositedseed layer. If the second material is a dielectric on only some layers,it may also be necessary to also deposit a second seed layer afterperformance of operation 412. Appropriate portions of the second seedlayer may be removed by the operation of block 318 or they may beremoved in other operations.

FIGS. 9(a)-9(f) provide exemplary schematic illustrations of side viewsof various stages involved in the formation of a layer of athree-dimensional structure according to one embodiment that follows theflowchart of FIG. 8.

FIG. 9(a) shows a first conductive material 464 that has been depositedonto a substrate 452. The deposition of first conductive material 464may have occurred by a blanket electrodeposition process such aselectroplating.

FIG. 9(b) depicts an unpatterned dielectric material 454 applied to asurface of the first conductive material 464. In this embodimentdielectric 454 may be a positive or negative photoresist, it may be aphotopolymer, or it may be some other dielectric material that isselectively patternable such as for example by an ablation process.

FIG. 9(c) depicts the dielectric material 454′ after it has beenpatterned to form openings 462 that extend from a distal surface of thedielectric through the thickness of the dielectric to the firstconductive material 464. The pattering process or processes used in theobtainment of the structure of FIG. 9(c) may take various forms. If thedielectric material is a photoresist the process may include theproduction of a photomask, the exposure of the photoresist toappropriate radiation through the photomask, and the subsequentdevelopment of the image patterned by the exposure. Alternatively, thepatterning may have included a direct write exposure by one or morescanning laser beams followed by development of the photoresist.

FIG. 9(d) depicts the partially formed structure after etching ofmaterial 464 produces a patterned material 464′ which includes openings472 that extend from a distal surface of the first conductive materialthrough the thickness of the first conductive material to the substrate(or to a previously formed layer if such a layer already existed on thesubstrate).

FIG. 9(e) depicts the partially formed layer of the structure afterdeposition of a second material 466 results in material 466 beingpreferentially deposited onto the substrate (or onto a previously formedlayer if such a layer already existed on the substrate) through theopenings 462 in the dielectric material 454′.

FIG. 9(f) depicts the completed layer after removal of dielectricmaterial 454′ and potentially after a planarization operation which mayhave been used, if necessary, to bring the height of the firstconductive material and second material to a desired level. Anynecessary planarization operation may be accomplished in different ways.For example, planarization may occur by mechanical means such aslapping, fly cutting, or milling or by chemical mechanical processes.

FIG. 10 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to another embodimentwherein a mask (e.g. a conformable contact mask or an adhered mask) isused to selectively etch openings into a first conductive material inpreparation for deposition of a second material. FIG. 10 includes anumber of elements that are common to both of FIGS. 6 and 8. Thesecommon elements include 302, 304, 306, 316, 318, 320, 322, 324 and 326.As these elements has been previously discussed, that discussion willnot be repeated at this time but instead the reader is directed back tothe discussion of FIG. 6 for a review of these elements. Similarly,previous discussions concerning the application, use, and partialremoval of seed layers will also not be repeated here as it is believedthat after reviewing the teachings herein, the reviewer will understandhow such seed layers may be applied, used, and portions removed.

After element 306 the process proceeds to element 508 which calls forthe deposition of a first conductive material (CM1) onto the substrateor previously formed layer. The height of deposition HCM1 is preferablygreater than or equal to a desired layer thickness and the deposition ispreferably of a blanket type.

Next the process proceeds to element 510 which calls for the use of amask in selectively etching the first conductive material to a depththat is equal to or slightly greater than HCM1. The use of a slightlylarger etching depth is preferred so as to ensure that the substrate orpreviously formed layer is reached. The etching forms at least oneopening through the first conductive material into which a secondmaterial (M2) will be deposited. After the etching is completed the maskis removed.

Next the process proceeds to element 512 which calls for the transfer ofa solidifiable material (SM) to the distal surface of CM1 by stampingthe solidifiable material from a transfer plate to the surface of CM1.The solidifiable material may be in a liquid, powder or paste likestate. The solidifiable material may be held on the transfer plate in apatterned or blanket state. In some embodiments electrostatic forces maybe used to aid in the transfer of the dielectric material.

Next the process moves forward to step 514 which calls for the curing ofthe transferred solidifiable material to form an insulated coating onthe surface of the first conductive material.

After element 514 the process proceeds to element 316 which, aspreviously noted, was already discussed in association with FIG. 6.

As with FIGS. 6 and 8, FIG. 10 includes bracketing which illustrates thecorrespondence between operations and elements. As with FIG. 6 theoperations in FIG. 10 are independent of one another as they are notbased upon shared elements.

FIGS. 11(a)-11(g) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to one embodiment that follows theflow of the flowchart of FIG. 10. In the example of FIGS. 11 (a)-11(g)the mask used for selective patterning is a conformable contact mask.

FIG. 11(a) depicts a deposit of a first conductive material (CM1) 564located on a substrate 552 (the deposit 564 could instead be located ona surface of a previously formed layer if such a layer already existedon the substrate). The deposition of CM1 is preferably a blanketdeposition where the material is electrodeposited. The distal surface ofCM1 may be planarized and trimmed so that CM1 has a precisely knownthickness if the blanket deposition of CM1 does not yield a sufficientlyuniform deposition, predictable deposition height, or the like.

FIG. 11(b) depicts a conformable contact (CC) mask 556 which is pressedagainst a surface (i.e. the distal surface) of CM1. The CC mask includesa conformable portion which contacts CM1 and a support portion which isseparated from CM1. The patterning of the conformable portion of themask may occur in a variety of different ways, some of which aredescribed in previously discussed U.S. Pat. No. 6,027,630.

FIG. 11(c) shows the CC mask 566 in contact with the first conductivematerial 564′ after it has been patterned to contain openings 562 thatextend from its distal surface through its thickness to the surface ofthe substrate (the opening would extend to the surface of a previouslyformed layer if such a layer already existed on substrate 552). Thedepth of etching may be programmed to be slightly more than thethickness of CM1 to ensure that the surface of the substrate orpreviously formed layer is reached.

FIG. 11(d) illustrates a transfer plate 558 having a support 560 and asolidifiable material 570 located on a surface thereof. The transferplate is located above the patterned first conductive material 564′ andthe arrows 568 indicate that the transfer plate will be stamped againstthe upper (i.e. distal) surface of CM1. In some alternative embodimentsthe transfer plate may have a curved shape and the solidifiable materialto be transferred to the surface of the first conductive material 564′may be transferred via a roll on and roll off motion.

FIG. 11(e) depicts the transfer plate located above the first conductivematerial after stamping has occurred as indicated by motion arrows 568′show that the transfer plate is moving away from the substrate and CM1.The transferable material 570 is shown in FIG. 11(e) as being separatedinto two parts 570′ which remains adhered to the transfer plate and 570″which has contacted the upper surface of CM1 and remains adhered theretosuch that openings 572 exist through the transferred material 570″.After transfer of material 570″ to the surface of CM1, the transferredmaterial is cured or solidified to form an insulative coating over thesurface of the CM1 564′.

FIG. 11(f) depicts the partially formed structure after removal of thetransfer plate and after deposition of a second material (M2) 574 ontothe substrate or previously formed layer through the openings 572 in thetransferred material and through the openings 562 through CM1. Theinsulative coating 582 formed from transferred solidifiable material570″ remains located on the upper surface of CM1 during deposition ofM2. As a result of the presence of the insulative material, the blanketdeposition of the M2 (e.g. via electroplating or electrophoreticdeposition) is effectively a selective deposition into the openings 572and 562.

FIG. 11(g) depicts the finalized layer comprising regions of the firstconductive material 564′ and regions of the second material 574′ (whichmay be identical to material 574 or it may modified such as by fillingor trimming away excess material) both located on the surface of asubstrate (which could instead be the surface of a previously formedlayer if such a layer existed on the substrate). The completed layer isformed by removing the insulated material 582 and by potentiallytrimming down the upper surface of the second material 574′ and possiblythe upper surface of the first conductive material 564′. The removal ofthe insulative material 582 may occur in a separate process from oralong with the trimming down of the first conductive material (CM1) andthe second material (M2).

FIG. 12 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to another embodimentwherein a mask (e.g. a conformable contact mask or an adhered mask) isused in the selective deposition of a first conductive material overwhich a dielectric material is deposited and patterned prior todepositing a second material.

The flowchart of FIG. 12 includes a number of elements that are alsofound in the flow charts of FIGS. 6, 8, and 10 and are referred to usingthe same reference numbers as set forth in these earlier figures. Thesecommon elements will not be discussed in association with this flowchartas they have already been discussed. These common elements are 302, 304,306, 316, 318, 320, 322, 324, and 326. For similar reasons furtherdiscussion concerning the use of seed layers will be omitted as well.

From element 306 the process proceeds to element 608 which calls for theuse of a mask in selectively depositing a first conductive material(CM1) onto a surface of the substrate or previously formed layer. Afterthe deposition is completed the mask is removed.

Next the process proceeds to element 610 which calls for the applyingand patterning of a dielectric material (DM) onto the surface of thefirst conductive material. The patterning of the DM results in openingsthru the DM through which a second material (M2) may be deposited ontothe substrate. The dielectric may take the form of a flowablephotoresist material, the form of a sheet of photoresist material, or itmay take some other form. In the case of a photoresist material,patterning may occur by selective exposure through a photomask and thensubsequent developing. From element 610 the process proceeds to element316 which has been discussed with regard to earlier flowcharts and thuswill not be discussed herein again

FIGS. 13(a)-13(h) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 12wherein a conformable contact mask is used for selective patterning of afirst conductive material.

FIG. 13(a) depicts a substrate 652 on which multiple layers will bestacked during the formation of a three-dimensional structure. Thesubstrate 652 may include previously formed layers (not shown).

FIG. 13(b) depicts a conformable contact (CC) mask 656 pressed against asurface of the substrate 652 in preparation for performing anelectrodeposition operation which will selectively deposit a firstconductive material (CM1) through openings in the conformable contactmask.

FIG. 13(c) depicts the CC mask 656 still being pressed against thesurface of the substrate after electrodeposition of CM1 664 onto thesubstrate within the openings in the CC mask.

FIG. 13(d) illustrates the partially formed first layer after removal ofthe CC mask showing CM1 664 deposited in a patterned manner on thesubstrate 652.

From FIG. 13(d) the process alternatively proceeds along one of twoalternative paths. The process either proceeds through operationsillustrated in FIG. 13(e)-1 or FIG. 13(e)-2 after which the processcontinues along a common path to FIG. 13(f). In FIG. 13(e)-1 a coatingof a dielectric material 668-1 is formed above and around CM1 whereasFIG. 13(e)-2 depicts a sheet of dielectric material 668-2 pressedagainst the distal surface of CM1.

FIG. 13(f) depicts the process after the dielectric material 668 hasbeen patterned to remove portions of dielectric material 668-1 or 668-2which were not located on the distal surface of CM1. If the dielectricmaterial is a photoresist such patterning may occur by exposure througha photomask and then by development of the resulting latent pattern. Insuch a case the photoresist may be of either the negative or positivetype.

FIG. 13(g) shows the partially formed structure after deposition of asecond material (M2) 674 through openings in the insulative material 668and openings in CM1 664.

FIG. 13(h) illustrates the structure after completion of the layer whichincludes the first conductive material 664 and the second material 674.The layer formation is completed by removing the insulative coating 668from above CM1 and by potentially planarizing or trimming the height ofCM1 and/or M2 (if such trimming is necessary).

FIG. 14 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to another embodimentwherein a patterned first dielectric is used to control the depositionlocation of a first conductive material and wherein a second dielectricmaterial is applied and patterned on the first conductive material andwhere the first dielectric material is removed and a second materialdeposited.

The flowchart of FIG. 14 includes a number of elements which are similarto elements included in the flowcharts of FIGS. 6, 8, 10, and 12 and asthese elements have already been discussed, they will not be discussedfurther herein. These common elements have been identified with the samereference numbers. These common elements include 302, 304, 306, 316,318, 320, 322, 324, and 326. For similar reasons further discussionconcerning the use of seed layers will be omitted as well.

After element 306 the process moves forward to element 708 which callsfor the application and patterning of a first dielectric material (DM1)on the surface of a substrate. The patterning of DM1 produces openingsthat extend from a distal surface of DM1 through the thickness of DM1 tothe surface of the substrate. The patterning of the dielectric materialand the openings will be used in the selective deposition of a firstconductive material (CM1) onto the substrate. DM1 may be of a variety oftypes. For example, it may be a positive or negative photoresist, whichmay be patterned as discussed herein elsewhere.

Next the process moves forward to element 710 which calls for thedeposition of CM1 onto the substrate through the openings in patternedDM1. In some embodiments the deposition of CM1 is an electrodepositionof the electroplating or electrophoretic type. If the deposition is ofthe electrophoretic type additional processes may be performed toincrease the density of the deposition.

Next the process moves forward to element 712 which calls for theapplication and patterning of a second dielectric material (DM2) overthe surface of CM1. Along with the patterning of DM2, DM1 is removed inwhole or in part to form openings where a second material (M2) is to bedeposited onto the substrate. DM2 may, for example, be a photoresist ofthe positive and the exposure of DM2 may result in further exposure ofDM1 and if DM1 is also a positive photoresist, such exposure may allownot only development and associated removal of portions of DM2 it mayalso allow development and removal of desired portions of DM1.

After element 712 the process proceeds to element 316 which has beendiscussed in association with the flowchart of FIG. 6 and will not bediscussed further at this time.

FIGS. 15(a)-15(g) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 14.

FIG. 15(a) depicts an unpatterned first dielectric (DM1) 754 located ona substrate 752.

FIG. 15(b) depicts the result of patterning the DM1 754 to form 754′which includes openings 762 that extent through DM1 to the substrate.

FIG. 15(c) depicts the partially formed structure after deposition of afirst conductive material (CM1) 764 into the openings 762. Thisdeposition may, for example, occur by electroplating.

FIG. 15(d) depicts the application of a second dielectric material (DM2)756 over the surfaces of the CM1 764 as well as the surfaces of thepreviously patterned dielectric 754′. From FIG. 15(d) the process mayproceed along two different paths. One process alternative is depictedin FIG. 15(e)-1 thru FIG. 15(f)-1 and ending with FIG. 15(g). The otherprocess alternative is shown in FIGS. 15(e)-2′, 15(e)-2″, 15(f)-2, andthen ending with FIG. 15(g).

FIG. 15(e)-1 depicts the process after patterning the DM2 756-1 andremoval of the DM1 754′. The patterning of DM2 and DM1 may have occurredby the same processing steps, for example, by exposing and developingthe two dielectric materials simultaneously (assuming they were bothphotoresists) or alternatively the patterning of DM2 and the removal ofDM1 may have occurred using different process operations. FIG. 15(f)-1shows the state of the process after depositing a second material (M2)774 into the openings 772 formed by the patterning of DM2 and theremoval of DM1.

The first alternative process ends with the completion of the layer asdepicted in FIG. 15(g) wherein completion of the layer occurred byremoving remaining portions of the DM2 756-1 and potentially by trimmingthe heights of depositions associated with CM1 and/or M2.

Turing to the second alternative, FIG. 15(e)-2′ shows the result oftrimming or planarizing the two dielectric materials down to a levelthat removes the DM2 from being located above the DM1. The resultingpattern of the DM2 is shown by reference number 756-2. In FIG. 15(e)-2′openings are formed by removal of the DM1. This removal of DM1 may occurin a number of different ways, for example, if DM1 was a positive resistand DM2 was a negative resist, a flood exposure of the partially formedstructure as illustrated in FIG. 15(e)-2′ could result in making thesecond dielectric material 756-2 resistive to development while makingthe first dielectric material susceptible to such development. As asecond example, the second dielectric material 756-2 may not be of aphotoresist type while the first dielectric material is of such a type,in which case the DM2 may not be susceptible to damage by a chemicalstripping agent that could be used to remove DM1. FIG. 15(e)-2″ showsthe state of the process after removal of DM1.

FIG. 15(f)-2 shows the partially formed structure after deposition of asecond material (M2) 774 into the openings formed by the removal of DM1.

This second alternative process ends with the completion of the layer aspreviously described and shown in FIG. 15(g).

FIG. 16 depicts a flowchart setting forth operations to be followed informing a three-dimensional structure according to another embodimentwherein the process is generalized to allow the deposition of more thantwo conductive materials.

The process illustrated in FIG. 16 begins with element 802 which callsfor the setting of a variable “n” to zero. The variable “n” indicatesthe layer number that is being formed. Variable “n” ranges from 1 up toN, where N is the number of the last layer to be formed, with theexception of “n” be initialized to a value of “0” momentarily.

The process then proceeds to element 804 where “n” is incremented to avalue of “n+1”.

Next, the process moves forward to element 806 which sets a variable mto a value of 1. The variable “m” sets the conductive material numberwhich is being deposited and ranges from a value of one up to a value ofM_(n) where M_(n) is the number of the last conductive material to bedeposited for layer “n”.

From element 806 the process proceeds to element 808 which calls for thegeneral defining of regions on a layer “n” which are to be occupied bythe 1^(st) thru M^(th) conductive materials.

Next the process proceeds to element 810 which calls for the m^(th)conductive material to be selectively located in the region defined forit.

Next the process moves forward to the optional element 812 which callsfor the removal of any treatment that was applied to a surface of any ofthe 1^(st) through mth conductive materials that have already beendeposited. Element 812 also calls for the potential planarization of thealready deposited 1^(st) thru m^(th) conductive materials. In somealternatives, the treatment removal may be achieved by the planarizationoperation.

Next the process continues on to element 814 which is a decision branchwhere an inquiry is made as to whether or not the variable “m” is equalto or greater than M_(n). If the answer to this inquiry is “no”, theprocess proceeds to element 816 which applies a treatment to the surfaceof the m^(th) conductive material and/or to the surfaces of the 1^(st)through m^(th) conductive materials to decrease its, or their,receptiveness to receiving an (m+1)^(th) conductive material. In thisembodiment the deposition of the (m+1)^(th) material occurs via anelectrodeposition process. In some alternatives, other depositionprocesses may be used.

From element 816 the process proceeds to element 818 where the variable“m” is incremented to “m+1” and the process loops back to element 810where an incremented mth material is deposited.

If the answer to the inquiry of element 814 was “yes”, the processproceeds to element 820 where the inquiry is made as to whether thecurrent layer number “n” is greater than or equal to the final layernumber N. If the answer to this inquiry is “no”, the process loops backto element 804 to begin formation of a next layer. If the answer to thisinquiry is “yes”, the process proceeds to element 822 which calls forthe ceasing of layer formation operations.

The process then moves onward to element 824 which calls for theperformance of any additional operations to release and/or complete theformation of the structure.

The process then proceeds to element 826 which calls for the end of theprocessing.

FIG. 17(a)-17(k) provide schematic illustrations of side views ofvarious stages involved in the formation of a layer of athree-dimensional structure according to the flowchart of FIG. 16 wherethe number of conductive materials is three.

FIG. 17(a) depicts a substrate 852. FIG. 17(b) shows an unpatterneddielectric material 854 located on top of the substrate. FIG. 17(c)shows the patterning of the dielectric material 854 to yield patterneddielectric 854′ where openings 862 have been formed through thedielectric in preparation for deposition of a first conductive material(CM1) 864 while FIG. 17(d) shows the process after deposition of CM1.

FIG. 17(e) shows the process after treatment of the surface of the CM1by forming a dielectric coating 868 there on. The dielectric coating maybe formed in a number of ways such as, for example, by electrophoreticdeposition or by electrostatically aided deposition.

FIG. 17(f) depicts the state of the process after a second patterning ofthe dielectric material 854 (i.e. a first patterning of material 854′)to yield patterned dielectric 854″ forms new openings 872 through thedielectric material for subsequent deposition of a second conductivematerial (CM2) while FIG. 17(g) depicts the process after deposition ofa second conductive material 874 into the openings 872.

FIG. 17(h) depicts the process after treatment of the surface of thesecond conductive material by formation of a dielectric coating 878thereon.

FIG. 17(i) shows the process after a further patterning (i.e. in thiscase complete removal) of the dielectric material 854″ to produceopenings 882 thru which a third conductive material (CM3) may bedeposited onto the substrate while FIG. 17(j) depicts the process afterthe deposition of CM3.

FIG. 17(k) depicts the partially completed layer after removal of thedielectric coating materials 868 and 878. FIG. 17(l) depicts the processafter trimming of the conductive materials 864′, 874′ and 884′ to adesired level. In an alternative embodiment the removal of thedielectric materials and the trimming of the conductive materials mayhave occurred in a single operation.

As noted in block 246 of FIG. 5(d), some embodiments of the inventionmay not involve the sealing of the surface of the first conductivematerial with a dielectric material but instead may involve the sealingof the surface of the first conductive material with a very thin coatingof a selected conductive material where the selected conductive materialhas the property or readily develops the property that it will notreadily accept coatings of electrodeposited materials.

An example of such a conductive material is chrome (i.e. chromium) whichitself may be electrodeposited onto the surface of the first conductivematerial. Other conductive materials that may not readily acceptelectroplated or electroless plated deposits may include titanium andtungsten. The deposition of this selected material preferably occurs ina selective manner and more preferably occurs using the same mask thatwas used to deposit the first conductive material. A sample embodimentof this type may include the following operations:

-   -   (1) Locate and selectively pattern a masking material on the        surface of a substrate or previously formed layer where openings        in the masking material correspond to locations where a first        conductive material is to be deposited.    -   (2) Deposit the first conductive material onto the substrate or        previously formed layer via the voids in the masking material.        The deposition of a first conductive material, for example, may        occur by electroplating.    -   (3) Prior to removing the masking material, electrodeposit a        thin layer of a selected metal which has the property, or        readily develops the property, that it will not readily accept        coatings of electrodeposited material (e.g. easily becomes        passivated) or at minimum has the property or readily develops        the property that coatings of electrodeposited material will not        adhere well to it. An example of such a conductive material is        chrome.    -   (4) Remove the masking material so as to expose the portions of        the substrate or previously formed layer where a second        conductive material is to be located.    -   (5) Deposit a second conductive material onto the surface of the        substrate or previously formed layer with the result that no        coating or a coating of reduced thickness forms over the first        conductive material as a result of the prior deposit of the thin        selected material. A reduced coating of material for purposes        herein refers to the difference in coating thickness of the        second conductive material deposited onto the first conductive        material as compared to the coating thickness of the second        conductive material deposited onto the substrate or previously        formed layer. In particular it is preferred that a reduced        coating thickness be no more than about 50% of the coating        thickness over the substrate or previously formed layer, more        preferably less then about 25% of that thickness, and even more        preferably less then about 10% of that thickness. Alternatively        worded, preferably the average volume of the coating per unit        area over the substrate is more than twice that over the first        conductive material, more preferably more than three times, and        even more preferably more than about ten times.    -   (6) After deposition of the second conductive material, the        deposited materials are planarized to a level which corresponds        to a desired layer thickness. This thickness sets the surface at        a level which is below the level which was occupied by the        selected material. As such, after the planarization operation is        completed, the selected material (i.e. the material that        inhibited deposition over the first conductive material) is        removed and the just formed layer is capable of accepting        electrodepositions at any or all locations on its surface. This        allows one or more additional layers of material to be added.

FIGS. 18(a)-18(f) provide schematic illustrations of side views of thestates of a process (e.g. the just described process) that may be usedin limiting or eliminating the deposition of a second conductivematerial above deposits of a first conductive material according to analternative embodiment of the invention wherein a thin layer of aselective conductive material is located above the surface of the firstconductive material wherein the selected conductive material is amaterial that does not readily except electrodepositions of otherconductive materials.

FIG. 18(a) depicts the state of the process after a substrate 902receives a patterned mask 904. FIG. 18(b) depicts a state of the processafter a first conductive material 906 is deposited onto the surface ofsubstrate 902 in those regions unshielded by the material of mask 904.

FIG. 18(c) depicts a state of the process after a selected material 908,e.g. chrome, is deposited over the surface of the first conductivematerial 906.

FIG. 18(d) depicts a state of the process after the material of mask 904is removed and portions of substrate 902 are exposed. The exposedregions of the substrate correspond to locations where a secondconductive material is to be deposited.

FIG. 18(e) depicts a state of the process after blanket deposition of asecond conductive material 910 occurs with the result that little or nodeposition of material 910 occurs over the first conductive material(due to the presence of the selected material) with the possibleexception of relatively small regions deposition of material 910 thatmay mushroom over the edges of selective material 908 as the deposit ofmaterial 910 onto the substrate surface and side wall surfaces of thefirst conductive material occurs.

FIG. 18(f) depicts a state of the process after deposited materials 906and 910 are planarized with overlying material 908 removed.

In various alternative embodiments the features of the various presentedembodiments may be combined in different ways. In still otheralternative embodiments various features of the examples of FIGS.5(b)-5(e) may be combined in a variety of ways. In some embodiments thevarious materials discussed herein need not be single materials but maybe multiple materials deposited on top of one another to form singlelayers from a plurality of varying materials.

The patent applications and patents set forth below are herebyincorporated by reference herein as if set forth in full. The teachingsin these incorporated applications can be combined with the teachings ofthe instant application in many ways: For example, enhanced methods ofproducing structures may be derived from some combinations of teachings,enhanced structures may be obtainable, enhanced apparatus may bederived, and the like. U.S. patent application Ser. No., Filing DateU.S. application Pub. No., Pub Date Inventor, Title 09/493,496 - Jan.28, 2000 Cohen, “Method For Electrochemical Fabrication” 10/677,556 -Oct. 1, 2003 Cohen, “Monolithic Structures Including Alignment and/orRetention Fixtures for Accepting Components” 10/830,262 - Apr. 21, 2004Cohen, “Methods of Reducing Interlayer Discontinuities inElectrochemically Fabricated Three- Dimensional Structures” XX/XXX,XXX -May 7, 2004 Smalley, “Methods for Electrochemically Fabricating (DocketP-US099-A-MF) Structures Using Adhered Masks, Incorporating DielectricSheets, and/or Seed layers That Are Partially Removed Via Planarization”10/271,574 -Oct. 15, 2002 Cohen, “Methods of and Apparatus for MakingHigh 2003-0127336A - Jul. 10, 2003 Aspect Ratio MicroelectromechanicalStructures” 10/697,597 - Dec. 20, 2002 Lockard, “EFAB Methods andApparatus Including Spray Metal or Powder Coating Processes”10/677,498 - Oct. 1, 2003 Cohen, “Multi-cell Masks and Methods andApparatus for Using Such Masks To Form Three-Dimensional Structures”10/724,513 - Nov. 26, 2003 Cohen, “Non-Conformable Masks and Methods andApparatus for Forming Three-Dimensional Structures” 10/607,931- Jun. 27,2003 Brown, “Miniature RF and Microwave Components and Methods forFabricating Such Components” 10/387,958 - Mar. 13, 2003 Cohen,“Electrochemical Fabrication Method and 2003-022168A - Dec. 4, 2003Application for Producing Three-Dimensional Structures Having ImprovedSurface Finish” 10/434,494 - May 7, 2003 Zhang, “Methods and Apparatusfor Monitoring 2004-0000489A - Jan. 1, 2004 Deposition Quality DuringConformable Contact Mask Plating Operations” 10/434,289 - May 7, 2003Zhang, “Conformable Contact Masking Methods and 20040065555A - Apr. 8,2004 Apparatus Utilizing In Situ Cathodic Activation of a Substrate”10/434,294 - May 7, 2003 Zhang, “Electrochemical Fabrication MethodsWith 2004-0065550A - Apr. 8, 2004 Enhanced Post Deposition ProcessingEnhanced Post Deposition Processing” 10/434,295 - May 7, 2003 Cohen,“Method of and Apparatus for Forming Three- 2004-0004001A - Jan. 8, 2004Dimensional Structures Integral With Semiconductor Based Circuitry”10/434,315 - May 7, 2003 Bang, “Methods of and Apparatus for Molding2003-0234179A - Dec. 25, 2003 Structures Using Sacrificial MetalPatterns” 10/434,103 - May 7, 2004 Cohen, “Electrochemically FabricatedHermetically 2004-0020782A - Feb. 5, 2004 Sealed Microstructures andMethods of and Apparatus for Producing Such Structures” XX/XXX,XXX - May7, 2004 Thompson, “Electrochemically Fabricated Structures (DocketP-US104-A-MF) Having Dielectric or Active Bases and Methods of andApparatus for Producing Such Structures” 10/434,519 - May 7, 2003Smalley, “Methods of and Apparatus for 2004-0007470A - Jan. 15, 2004Electrochemically Fabricating Structures Via Interlaced Layers or ViaSelective Etching and Filling of Voids” 10/724,515 - Nov. 26, 2003Cohen, “Method for Electrochemically Forming Structures IncludingNon-Parallel Mating of Contact Masks and Substrates” XX/XXX,XXX - May 7,2004 Cohen, “Multi-step Release Method for (Docket P-US105-A-MF)Electrochemically Fabricated Structures”

Various other embodiments are possible. Some of these embodiments may bebased on a combination of the teachings herein with various teachingsincorporated herein by reference. Some embodiments may not use aplanarization processes on some layers or on any layers. Someembodiments may use nickel as a structural material while otherembodiments may use different materials such as gold, silver, copper,zinc, or any other desired materials that can be separated from a copperand/or some other sacrificial material. Some embodiments may remove asacrificial material while other embodiments may not. In someembodiments, the depth of deposition may be enhanced by pulling aconformable contact mask away from the substrate as deposition isoccurring in a manner that allows the seal between the conformableportion of the CC mask and the substrate to shift from the face of theconformal material to the inside edges of the conformable material.

In view of the teachings herein, many further embodiments, alternativesin design and uses are possible and will be apparent to those of skillin the art. As such, it is not intended that the invention be limited tothe particular illustrative embodiments, alternatives, and usesdescribed above but instead that it be solely limited by the claimspresented hereafter.

1. A method for forming at least a portion of a three-dimensionalstructure from a plurality of stacked and adhered layers, comprising:(a) depositing and patterning a first conductive material on a substrateor previous layer to obtain a desired pattern having at least oneprotrusion of the first conductive material having a surface and atleast one opening extending from the surface through a thickness of thefirst conductive material to the substrate or previously formed layer;(b) treating the surface of the first conductive material to decreasesusceptibility of the surface to receive a second conductive materialwhich is to be deposited; (c) depositing the second conductive material,such that deposition occurs with a higher selectivity to one or moreregions defined by the at least one opening, wherein the selectivityresults, at least in part, from the treating of the surface of the firstconductive material; (d) removing the effect of the treating of thesurface of the first conductive material; (e) repeating elements (a)-(d)such that a plurality of stacked layers are adhered to successivelyformed layers to form the at least portion of the three-dimensionalstructure.
 2. The method of claim 1 wherein the depositing andpatterning of the first conductive material comprises electroplating thefirst conductive material onto the substrate or previously formed layerusing a contact mask.
 3. The method of claim 1 wherein the depositingand patterning of the first conductive material comprises electroplatingthe first conductive material onto the substrate or previously formedlayer using a patterned dielectric adhered to the substrate orpreviously formed layer.
 4. The method of claim 1 wherein the depositingand patterning of the first conductive material comprises blanketdepositing the first conductive material onto the substrate orpreviously formed layer and then patterning the deposited firstconductive material.
 5. The method of claim 4 wherein the patterning ofthe first conductive material comprises selectively etching the firstconductive material wherein selectivity of the etching is obtained usinga contact mask.
 6. The method of claim 4 wherein the patterning of thefirst conductive material comprises selectively etching the firstconductive material wherein selectivity of the etching is obtained usinga patterned dielectric adhered to the substrate or previously formedlayer.
 7. The method of claim 6 wherein the etching comprises wetetching.
 8. The method of claim 7 wherein the etching comprises chemicaletching.
 9. The method of claim 7 wherein the etching compriseselectrochemical etching.
 10. The method of claim 6 wherein the etchingcomprises dry etching.
 11. The method of claim 6 wherein the etchingcomprises at least one of reactive ion etching, sputter etching, orvapor phase etching.
 12. The method of claim 4 wherein the patterning ofthe first conductive material comprises ablating selected portions ofthe first conductive material.
 13. The method of claim 1 wherein thetreating of the surface comprises stamping a solidifiable materialagainst the surface to transfer the material to the surface and thensolidifying the solidifiable material on the surface to form adielectric coating.
 14. The method of claim 1 wherein the treating ofthe surface comprises applying at least one of a solidifiable materialor powder material to the surface using a roller to transfer thesolidifiable material and then solidifying and adhering the transferredsolidifiable material on the surface to form a dielectric coating. 15.The method of claim 1 wherein the treating of the surface comprises: (a)applying and adhering a sheet of photoresist to the surface of the firstconductive material; (b) patterning the photoresist to leave at leastone opening through the photoresist in at least one location where thesecond conductive material is to be deposited.
 16. The method of claim 1wherein the treating of the surface comprises: (a) applying a coating ofphotoresist to the surface of the first conductive material; (b)solidifying, patterning, and adhering the photoresist to leave at leastone opening through the photoresist in at least one location were thesecond conductive material is to be deposited.
 17. The method of claim 1wherein the treating of the surface comprises: (a) applying a sheet ofdielectric material to the surface of the first conductive material; (b)bonding the sheet of dielectric material to the surface; and (c)applying at least one of gas pressure, liquid conveyed pressure orparticulate conveyed pressure to the sheet to cause separation betweenthose portions of the sheet supported by the first conductive materialand those portions that are not supported.
 18. The method of claim 1wherein the treating of the surface comprises: (a) applying asolidifiable material, supported by a support structure, to the firstconductive material; (b) solidifying solidifiable material on the firstconductive material to form a dielectric coating; and (c) lifting off orpeeling back the support structure to leave the surface of the firstconductive material covered by the dielectric coating whereby portionsof the coating not in contact with the first conductive material remainadhered to the support structure during lifting off or peeling back. 19.The method of claim 1 wherein the treating of the surface comprises: (a)adhering a patterned dielectric material to the surface of the firstconductive material, wherein the patterned dielectric is supported by asupport structure; and (b) separating the support structure from thepatterned dielectric.
 20. The method of claim 1 wherein the treating ofthe surface comprises: (a) applying a solidifiable material to thesurface of the first conductive material and to the substrate orpreviously formed layer exposed by the at least one opening; (b)solidifying the solidifiable material to form a first solidifiedmaterial; and (c) planarizing the solidified material to expose thefirst conductive material; (d) selectively depositing a secondsolidifiable material onto the exposed first conductive material andthen solidifying the second solidifiable material to form a secondsolidified material; and (e) removing the first solidified material toexpose the substrate or previously formed layer through the at least oneopening in the first conductive material.
 21. The method of claim 1wherein the treating of the surface comprises applying a selectedconductive material to the exposed surface of the first conductivematerial, wherein the selective conductive material has the propertythat is does not readily accept at least one of electrodeposits orelectroless deposits of at least some other conductive materials. 22.The method of claim 21 wherein the selected conductive materialcomprises chromium.
 23. The method of claim 1 wherein the treating ofthe surface comprises a chemical treatment of the surface that convertsthe surface to a dielectric material.
 24. The method of claim 23 whereinthe chemical treatment oxidizes the exposed surface of the firstconductive material.
 25. The method of claim 1 wherein the patterning ofthe first conductive material comprises: (a) contacting or adhering amask to the substrate or previously formed layer, wherein the mask hasat least one opening through which the first conductive material may bedeposited onto the substrate or previously formed layer; and (b)electrodepositing the first conductive material onto the substrate orpreviously formed layer through the at least one opening.
 26. The methodof claim 25, wherein a height of the at least one opening through themask is greater than a thickness of deposit of the first conductivematerial, such that at least a portion of the opening remains unfilledby the first conductive material, and wherein the treating of thesurface of the first conductive material, comprises: (a)electrophoretically depositing a dielectric material into the unfilledportion of the at least one opening.
 27. The method of claim 26,additionally comprising: (a) treating the electrophoretically depositeddielectric material to transform the electrophoretically depositedmaterial into at least one cohesive insulative coating.
 28. The methodof claim 27 wherein the treating of the electrophoretically depositeddielectric material comprises at least one of: (a) applying pressure tothe electrophoretically deposited dielectric material; (b) heating theelectrophoretically deposited dielectric material; or (c) applying aselected radiation to the electrophoretically deposited dielectricmaterial.
 29. The method of claim 25, wherein a height of the at leastone opening through the mask is greater than a thickness of deposit ofthe first conductive material, such that at least a portion of theopening remains unfilled by the first conductive material, and whereinthe treating of the surface of the first conductive material, comprisesspraying or spreading a material into the unfilled portion of the atleast one opening.
 30. The method of claim 29, additionally comprisingtreating the sprayed or spread material to form at least one cohesiveinsulative coating within the at least one opening.
 31. The method ofclaim 30 wherein the treating of the sprayed or spread dielectricmaterial comprises at least one of: (a) applying pressure to the sprayedor spread material; (b) heating the sprayed or spread material; (c)applying a selected radiation to the sprayed or spread material; or (d)removing oxygen from the sprayed or spread material.
 32. The method ofclaim 25, wherein a height of the at least one opening through the maskis greater than a thickness of deposit of the first conductive material,such that at least a portion of the opening remains unfilled by thefirst conductive material, and wherein the treating of the surface ofthe first conductive material, comprises electrostatically directing apowdered dielectric material to a desired location, or away from adesired location, using repulsive or attractive force or causingadhesion between a powdered dielectric and the first conductive materiallocated in an unfilled portion of the at least one opening.
 33. Themethod of claim 32, additionally comprising removing powdered dielectricmaterial from undesired locations using at least one of gravity, amagnetic brush, or gas flow.
 34. The method of claim 32, additionallycomprising treating the powdered dielectric material to form at leastone cohesive insulative coating within the at least one opening.
 35. Themethod of claim 34 wherein the treating of the powdered dielectricmaterial comprises at least one of: (a) applying pressure to powdereddielectric material; (b) heating the powdered dielectric material; or(c) applying a selected radiation to the powdered dielectric.
 36. Themethod of claim 25 wherein mask is a first mask and wherein the treatingof the surface of the first conductive material comprises: (a) applyinga coating of solidifiable dielectric material on the first mask and onthe surface of the first conductive material; and (b) solidifying atleast a portion of the solidifiable dielectric material to form at leasta partial insulative coating; and (c) etching away those portions of thecoating of solidifiable dielectric material or of the insulative coatingthat do not overlay the first conductive material.
 37. The method ofclaim 25 wherein mask is a first mask and wherein the treating of thesurface of the first conductive material comprises: (a) applying a sheetor coating of photoresist on the first mask and on the surface of thefirst conductive material; and (b) patterning the photoresist to form aninsulative coating on the first conductive material.
 38. The method ofclaim 1 wherein formation of a layer comprises deposition of at leastone additional conductive material.
 39. The method of claim 38 wherein asurface of the second conductive material, or of one of the at least oneadditional conductive materials, is treated to decrease susceptibilityof the surface of the second conductive material, or of one of the atleast one additional conductive materials, to receive a deposition of asubsequently deposited conductive material.
 40. The method of claim 39wherein the treatment of the second conductive material, or of one ofthe at least one additional conductive materials, treats a surface ofthe first conductive material to decrease susceptibility of the surfaceof the first conductive material to receive a deposition of thesubsequently deposited conductive material.
 41. The method of claim 39wherein the treatment of the second conductive material, or of one ofthe at least one additional conductive materials, is removed separatelyform the removal of the treatment of the first conductive material. 42.The method of claim 39 wherein the treatment of the second conductivematerial, or of one of the at least one additional conductive materials,is removed along with the removal of the treatment of the firstconductive material.
 43. The method of claim 1 additional comprising:(a) planarizing the first conductive material and the second conductivematerial to a common level during the formation of at least some layers.44. The method of claim 1 wherein one of the first or second conductivematerials is a structural material while the other of the first orsecond conductive materials is a sacrificial material, and wherein themethod additional comprises separating the sacrificial material from thestructural material to release the at least portion of thethree-dimensional structure.
 45. The method of claim 1 wherein the firstconductive material comprises a plurality of materials one deposited onanother.
 46. The method of claim 1 wherein the first conductive materialcomprises a material on one layer and a different material on adifferent layer.
 47. The method of claim 1 wherein the second conductivematerial comprises a plurality of materials one deposited on another.48. The method of claim 1 wherein the second conductive materialcomprises a material on one layer and a different material on adifferent layer.
 49. A method for forming at least a portion of athree-dimensional structure from a plurality of stacked and adheredlayers, comprising: (a) depositing and patterning a first conductivematerial on a substrate or previous layer to obtain a desired patternhaving at least one protrusion of the first conductive material having asurface and at least one opening extending from the surface through athickness of the first conductive material to the substrate orpreviously formed layer; (b) treating the surface of the firstconductive material to form a coating on the first conductive materialwhich may be removed from the first material along with any secondconductive material which may be deposited onto the coating; (c)depositing the second conductive material at least into the at least oneopening; (d) removing the coating from the surface of the firstconductive material along with any second conductive material depositedthereon; (e) repeating elements (a)-(d) such that a plurality of stackedlayers are adhered to successively formed layers to form the at leastportion of the three-dimensional structure.
 50. The method of claim 49wherein formation of a layer comprises deposition of at least oneadditional conductive material.
 51. The method of claim 50 wherein asurface of the second conductive material, or of one of the at least oneadditional conductive materials, is treated to decrease susceptibilityof the surface of the second conductive material, or of one of the atleast one additional conductive materials, to receive a deposition of asubsequently deposited conductive material.
 52. The method of claim 51wherein the treatment of the second conductive material, or of one ofthe at least one additional conductive materials, treats a surface ofthe first conductive material to decrease susceptibility of the surfaceof the first conductive material to receive a deposition of thesubsequently deposited conductive material.
 53. The method of claim 51wherein the treatment of the second conductive material or of one of theat least one additional conductive materials is removed separately formthe removal of the treatment of the first conductive material.
 54. Themethod of claim 51 wherein the treatment of the second conductivematerial, or of one of the at least one additional conductive materials,is removed along with the removal of the treatment of the firstconductive material.
 55. The method of claim 49 additional comprisingplanarizing the first conductive material and the second conductivematerial to a common level during the formation of at least some layers.56. The method of claim 49 wherein one of the first or second conductivematerials is a structural material while the other of the first orsecond conductive materials is a sacrificial material, and wherein themethod additional additionally comprises separating the sacrificialmaterial from the structural material to release the at least portion ofthe three-dimensional structure.
 57. A method for forming at least aportion of a three-dimensional structure from a plurality of stacked andadhered layers, comprising: (a) depositing and patterning a firstconductive material on a substrate or previous layer to obtain a desiredpattern having at least one protrusion of the first conductive materialhaving a surface and at least one opening extending from the surfacethrough a thickness of the first conductive material to the substrate orpreviously formed layer; (b) forming a dielectric coating on the surfaceof the first conductive material to decrease susceptibility of thesurface to receive a second conductive material which is to bedeposited; (c) depositing the second conductive material, such thatdeposition occurs with a higher selectivity to one or more regionsdefined by the at least one opening, wherein the selectivity results, atleast in part, from the treating of the surface of the first conductivematerial; (d) removing the effect of the treating of the surface of thefirst conductive material; (e) repeating elements (a)-(d) such that aplurality of stacked layers are adhered to successively formed layers toform the at least portion of the three-dimensional structure.
 58. Themethod of claim 57 additional comprising planarizing the firstconductive material and the second conductive material to a common levelduring the formation of at least some layers.
 59. The method of claim 57wherein one of the first or second conductive materials is a structuralmaterial while the other of the first or second conductive materials isa sacrificial material, and wherein the method additionally comprisesseparating the sacrificial material from the structural material torelease the at least portion of the three-dimensional structure.
 60. Amethod for forming at least a portion of a three-dimensional structurefrom a plurality of stacked and adhered layers, comprising: (a)depositing and patterning a first conductive material on a substrate orprevious layer to obtain a desired pattern having at least oneprotrusion of the first conductive material having a surface and atleast one opening extending from the surface through a thickness of thefirst conductive material to the substrate or previously formed layer;(b) treating the surface of the first conductive material to decreasesusceptibility of the surface to receive a second material which is tobe deposited; (c) depositing the second material, such that depositionoccurs with a higher selectivity to one or more regions defined by theat least one opening, wherein the selectivity results, at least in part,from the treating of the surface of the first conductive material; (d)removing the effect of the treating of the surface of the firstconductive material; (e) repeating elements (a)-(d) such that aplurality of stacked layers are adhered to successively formed layers toform the at least portion of the three-dimensional structure.
 61. Themethod of claim 60 wherein the first conductive material comprises aplurality of materials one deposited on another.
 62. The method of claim60 wherein the first conductive material comprises a material on onelayer and a different material on a different layer.
 63. The method ofclaim 60 wherein the second material comprises a plurality of materialsone deposited on another.
 64. The method of claim 60 wherein the secondmaterial comprises a material on one layer and a different material on adifferent layer.
 65. A method for forming at least a portion of athree-dimensional structure from a plurality of stacked and adheredlayers, comprising: (a) depositing and patterning a first conductivematerial on a substrate or previous layer to obtain a desired patternhaving at least one protrusion of the first conductive material having asurface and at least one opening extending from the surface through athickness of the first conductive material to the substrate orpreviously formed layer; (b) treating the surface of the firstconductive material to form a coating on the first conductive materialwhich may be removed from the first material along with any secondmaterial which may be deposited onto the coating; (c) depositing thesecond material at least into the at least one opening; (d) removing thecoating from the surface of the first conductive material along with anysecond material deposited thereon; (e) repeating elements (a)-(d) suchthat a plurality of stacked layers are adhered to successively formedlayers to form the at least portion of the three-dimensional structure.66. The method of claim 65 wherein the first conductive materialcomprises a plurality of materials one deposited on another.
 67. Themethod of claim 65 wherein the first conductive material comprises amaterial on one layer and a different material on a different layer. 68.The method of claim 65 wherein the second material comprises a pluralityof materials one deposited on another.
 69. The method of claim 65wherein the second material comprises a material on one layer and adifferent material on a different layer.